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TSP16N50M Dataheets PDF



Part Number TSP16N50M
Manufacturers Truesemi
Logo Truesemi
Description 500V N-Channel MOSFET
Datasheet TSP16N50M DatasheetTSP16N50M Datasheet (PDF)

TSP16N50M / TSF16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Feature.

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TSP16N50M / TSF16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 16.0A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 45nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. TSP16N50M TSF16N50M 500 16 16* 9.6 9.6 * 64 64 * ± 30 853 20 4.5 200 38.5 1.59 0.3 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient TSP16N50M 0.63 0.5 62.5 TSF16N50M 3.3 -62.5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W TSP16N50M / TSF16N50M Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 -- ----- -- 0.6 ----- On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 8.0 A 2.5 3.8 -- 0.32 --1 10 100 -100 4.5 0.38 V V/°C µA µA nA nA V Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2200 -- 350 -- 35 ---- pF pF pF VDD = 250 V, ID = 16.0A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 16.0 A, VGS = 10 V (Note 4, 5) -------- 50 170 90 80 45 12 20 ------- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16.0 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 16.0 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6 mH, IAS = 16.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 16.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ------ -- 16.0 -- 64.0 -- 1.5 500 -5.0 -- A A V ns µC Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current 12 V = 100V DS 10 V = 250V DS V = 400V 8 DS 6 4 2 ? Note : I = 16.0 A D 00 10 20 30 40 50 Q , Total Gate Charge [nC] G Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TSP16N50M Figure 9-2. Maximum Safe Operating Area for TSF16N50M Figure 10. Maximum Drain Current vs Case Temperature Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for TSP16N50M Figure 11-2. Transient Thermal Response Curve for TSF16N50M Gate Charge Test Circuit & Waveform 50KΩ SameType asDUT 12V 200nF 300nF VGS 10V Qg VGS VDS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms 10V VDS VGS RG RL VDD DUT VDS 90% VGS10% td(on) tr ton td(off) tf toff 10V tp Unclamped Inductive Switching Test Circuit & Waveforms RG VDS ID L EAS=--21-- LIAS2 BVD.


B1030 TSP16N50M TSF16N50M


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