Document
TSP16N50M / TSF16N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 16.0A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 45nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G ●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSP16N50M TSF16N50M 500
16 16* 9.6 9.6 * 64 64 *
± 30 853 20 4.5 200 38.5 1.59 0.3 -55 to +150
300
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
TSP16N50M 0.63 0.5 62.5
TSF16N50M 3.3 -62.5
Units V A A A V mJ mJ
V/ns W
W/°C °C
°C
Units °C/W °C/W °C/W
TSP16N50M / TSF16N50M
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF IGSSR
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
500
--
-----
--
0.6
-----
On Characteristics
VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 8.0 A
2.5 3.8 -- 0.32
--1 10 100 -100
4.5 0.38
V V/°C µA µA nA nA
V Ω
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2200 -- 350 -- 35
----
pF pF pF
VDD = 250 V, ID = 16.0A, RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 16.0 A, VGS = 10 V
(Note 4, 5)
--------
50 170 90 80 45 12 20
-------
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16.0 A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, IS = 16.0 A, dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6 mH, IAS = 16.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 16.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
------
-- 16.0 -- 64.0 -- 1.5 500 -5.0 --
A A V ns µC
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current
12 V = 100V
DS
10 V = 250V
DS
V = 400V 8 DS
6
4
2 ? Note : I = 16.0 A
D
00 10 20 30 40 50
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
Figure 9-1. Maximum Safe Operating Area for TSP16N50M
Figure 9-2. Maximum Safe Operating Area for TSF16N50M
Figure 10. Maximum Drain Current vs Case Temperature
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for TSP16N50M
Figure 11-2. Transient Thermal Response Curve for TSF16N50M
Gate Charge Test Circuit & Waveform
50KΩ
SameType asDUT
12V
200nF
300nF
VGS 10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS RG
RL VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS ID
L
EAS=--21-- LIAS2
BVD.