TYPE DIODE. MBRF10U100CTA Datasheet

MBRF10U100CTA DIODE. Datasheet pdf. Equivalent

MBRF10U100CTA Datasheet
Recommendation MBRF10U100CTA Datasheet
Part MBRF10U100CTA
Description SCHOTTKY BARRIER TYPE DIODE
Feature MBRF10U100CTA; SEMICONDUCTOR TECHNICAL DATA MBRF10U100CTA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY.
Manufacture KEC
Datasheet
Download MBRF10U100CTA Datasheet





KEC MBRF10U100CTA
SEMICONDUCTOR
TECHNICAL DATA
MBRF10U100CTA
SCHOTTKY BARRIER TYPE DIODE
SWITCHING MODE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEAT  URES
Average Output Rectified Current
: IO=10A.
Repetitive Peak Reverse Voltage
: VRRM=100V.
Low Forward Voltage.
Low Reverse Current.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Repetitive Peak Reverse Voltage
Average Output Rectified
Current (Tc=110 ) (Note)
VRRM
IO
100
10
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
100
Junction Temperature
Tj -40 150
Storage Temperature Range
Tstg -55 150
Note : average forward current of centertap full wave connection.
UNIT
V
A
A
AC
E
LM
D
NN
123
R
H
1. ANODE
2. CATHODE
3. ANODE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
2
13
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Repetitive Peak
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note : A value of one cell
(Note)
(Note)
(Note)
(Note)
VFM
IRRM
trr
Rth(j-c)
TEST CONDITION
IFM=5A
VRRM=Rated
IF=1.0A, di/dt=-30A/
Juction to Case
MIN.
-
-
-
-
TYP.
-
MAX.
0.85
UNIT
V
2 50
- 35
- 4.5 /W
2010. 9. 28
Revision No :0
OK MQ1/2A



KEC MBRF10U100CTA
MBRF10U100CTA
  100
IF - VF
10 Tj =150 C
Tj =25 C
1
0.1
0
0.2 0.4 0.6 0.8
1
FORWARD VOLTAGE VF (V)
100
10
1
0.1
0.01
0.001
0.0001
0
IR - VR
Tj =150 C
Tj =125 C
Tj =75 C
Tj =25 C
20 40 60 80 100 120
REVERSE VOLTAGE VR (V)
2010. 9. 28
Revision No : 0
OK MQ2/2A



KEC MBRF10U100CTA
|'I'. HAR'I'ONO IS'I'ANA T'EKNOLOGI
PREFARED BY
C}IECKBD BV
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SIIRATRIYONO l',q-t,qd*n:axru
DE  SCzumoN :LF DIODE SCHOT]KY i0A,/ltr(rv
MAMIIACTIIRER : L1EC
SU?PLIER
: IC RgS
DIST RIBI]TED 'I'O :
MATERII TL QUALITY ASSI]RANCE ( RD DEPT,
EVALUATION
RESULT
INFORMATION
NIIMBER ; 3 5 04/MSCA{AR 05/l ?
DATE
: Nla\ 22,2tJ12
REV
: R00
NO IHP
S 2 SR 068
HITCODE r AG-391010-MBA
cHASTS
PARTNO : MBRFIoUI00CTA-UP
:CAIEGORY SECOND SIIPPLIER
NOTE
rYPE
*"':L,STAGE : SAMPLF,
TOTAL STATUS
AIL INSPECTION & MEASUREMENT
l\PASS BY 0_E S l 6 [r-e
OK
I. SPECIFICATION COMPARISON
fll I
Guarding for overvoltage protection
Lower pever lossos, and high eteciency
Lo$, foMdrd voltage drop
Lo\ r leakage current
High foMard surg€ capability
High trequehcy oporation
l\4eet6 MSL level1, pe. J-std-020, LF
maximum peak of 245oC
Solder dip 2600C, 40sec
Componen ih accordence to ROHS
FIU€.r
pqNl
|qnrh[pllhl}ti6el,rFInn(r.'t.tarrrdm||tg,:da og^rtr|6:h,tDo]:{tDD:{<Ctt
oin €.Dra (a p:lg lt/ protF:ttxr apFl).ico.
SAMPLE
A.rrr,-. { rulp d R..1rli.J t irrr.nl
: L, I il,{.
Rcnclrlr!. l'.Jl R3rsr,a \.itJr:
I .lr{ l1,r\r rJ \'i{'{*..
| {|ln R.1cti( ('un!.nt.
\\t i | ( lri\(i luol)l: l'o$lll sr ff t ) '\tl,t i( ,^ I ]()\
( o\\'l1lt I t.ll & ( l|(,I'fl:R '\l'l'1.!( .{ | jl rN.
RESULT
ll. Meximum R.tings ahd Electrical Char.deristics ( TA - 25.C )
PARAI\,IETER
Maximum repetitive peak Reverse Voltage
Workihg peak Gverse voltage
Maxjmum DC blocking voltage
P6ak repetitive rcverce curent per diode tpt2us. 1KHz
Maximum average foMard rectified current at Tamb =155oC
Peak forward 6urge current 8.3ms halfsjnewaw
atlF:5AMaximum instahtaeous forward voltago
Tj: 2SoC
lF :54 TJ='125oC
lF :10A Tj= 25oc
AlF : 10 TJ= 125oC
Maxtmum DC Rev€rse Leakage Curieht
Tj: 25oC
Totalthermal resis fan c e luhction to ambtehl
Reverse recolEry time
TJ= 125oC
O perating j un ctioh temperture
Storago Temperature
lsolated voltage from terminalto heatsihk for 1 minut
Note l
Not complette specjfication --> PASS
SYIVBOL
IRRM
lFsM
lR
R6JA
tn
Tr
TsrG
VALUE
HIT SAMPLE
100 100
100
r00
0.5
Ttldevice : 10
Per diode : 5
10
100
o.76 085
0.51
0.85
0.71
3.5 {Tj: 25"c)
4.5 (Tji 100'c)
50
4.5
-65oC to +175oC
-65oC to +1750C
1500
-40oC to +150oC
-55oC to +150oC
UNITS RESULT
OK
PASS
PASS
OK
PASS
Volt PASS
pA
PASS
PASS
hs PASS
PASS
PASS
PASS
F-RO0S9
Pag€ 1 of 3
 MQA
OK





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