MOS Transistor. HCT7000MTX Datasheet

HCT7000MTX Transistor. Datasheet pdf. Equivalent


OPTEK HCT7000MTX
Product Bulletin HCT7000M
January 1996
N-Channel Enhancement Mode MOS Transistor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Features
200mA ID
Ultra small surface mount package
RDS(ON) < 5
Pin-out compatible with most SOT23
MOSFETS
Description
The HCT7000M is a high performance
enhancement mode N-channel MOS
transistor chip packaged in the ultra
small 3 pin ceramic LCC package.
Electrical characteristics are similar to
those of the JEDEC 2N7000. The pin-
out and footprint matches that of most
enhancement mode MOS transistors
built in SOT23 plastic packages.
Absolute Maximum Ratings
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C
Thermal Resistance RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W
Thermal Resistance RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W
Notes:
(1) TS = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
The HCT7000M is available processed
to TX and TXV levels per MIL-PRF-
19500. Order HCT7000MTX or
HCT7000MTXV. Typical screening and
lot acceptance tests are provided on
page 13-4. TX and TXV products
receive a VGS HTRB at 24 V for 48 hrs.
at 150o C and a VDS HTRB at 48 V for
260 hrs. at 150o C.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-36
(972) 323-2200
Fax (972) 323-2396


HCT7000MTX Datasheet
Recommendation HCT7000MTX Datasheet
Part HCT7000MTX
Description N-Channel Enhancement Mode MOS Transistor
Feature HCT7000MTX; Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7.
Manufacture OPTEK
Datasheet
Download HCT7000MTX Datasheet




OPTEK HCT7000MTX
Types HCT7000M, HCT7000MTX, HCT7000MTXV
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITION
VDSS Drain-Source Voltage
60 V VGS = 0 V, ID = 10 µA
VGS(TH) Gate Threshold Voltage
.8 3.0
V VDS = VGS, ID = 1 mA
IGSS Gate Leakage
IDSS Zero Gate Voltage Drain Current
±10 nA VDS = 0 V, VGS = ±15 V
1 µA VGS = 0 V, VDS = 48 V
ID(ON) On-State Drain Current
RDS(ON) Drain-Source on-Resistance
75
5
mA VDS = 10 V, VGS = 4.5 V
VGS = 10 V, ID = 0.5 A
VDS(ON) Drain-Source on-Voltage
2.5 V VGS = 10 V, ID = 0.5 A
Gfs Forward Transconductance
100 mS VDS = 10 V, ID = 0.2 A
Ciss Input Capacitance
60 pF VDS = 25 V, VGS = 0 V, f = 1MHz
Coss Output Capacitance
25 pF
Crss Reverse Transfer Capacitance
5 pF
t(on) Turn-on Time
t(off) Turn-off Time
10 ns VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25
10 ns
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-37







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