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Power MOSFET. APT1201R4BFLLG Datasheet

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Power MOSFET. APT1201R4BFLLG Datasheet






APT1201R4BFLLG MOSFET. Datasheet pdf. Equivalent




APT1201R4BFLLG MOSFET. Datasheet pdf. Equivalent





Part

APT1201R4BFLLG

Description

Power MOSFET



Feature


APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 Ω POWER MOS 7 R FREDFET Pow er MOS 7® is a new generation of low l oss, high voltage, N-Channel enhanceme nt mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by s ignificantly lowering 7® combines lowe r conduction and switching RDS(ON) los ses along with excepti.
Manufacture

Microsemi

Datasheet
Download APT1201R4BFLLG Datasheet


Microsemi APT1201R4BFLLG

APT1201R4BFLLG; onally fast switching speeds inherent wi th Microsem's patented metal gate stru cture. TO-247 D3PAK • Lower Input Capacitance • Lower Miller Capacitanc e • Lower Gate Charge, Qg • Increa sed Power Dissipation • Easier To Dri ve • TO-247 or Surface Mount D3PAK Pa ckage D G S MAXIMUM RATINGS Symbol Pa rameter All Ratings: TC = 25°C unless otherwise specified. APT1201R4.


Microsemi APT1201R4BFLLG

B_SFLL UNIT VDSS ID IDM VGS VGSM PD Dr ain-Source Voltage Continuous Drain Cur rent @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-S ource Voltage Transient Total Power Dis sipation @ TC = 25°C Linear Derating F actor 1200 9 36 ±30 ±40 300 2.40 Vo lts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junc tion Temperature Range .


Microsemi APT1201R4BFLLG

Lead Temperature: 0.063" from Case for 1 0 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanch e Energy 1 Single Pulse Avalanche Energ y 4 -55 to 150 300 9 30 1210 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 25.

Part

APT1201R4BFLLG

Description

Power MOSFET



Feature


APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 Ω POWER MOS 7 R FREDFET Pow er MOS 7® is a new generation of low l oss, high voltage, N-Channel enhanceme nt mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by s ignificantly lowering 7® combines lowe r conduction and switching RDS(ON) los ses along with excepti.
Manufacture

Microsemi

Datasheet
Download APT1201R4BFLLG Datasheet




 APT1201R4BFLLG
APT1201R4BFLL(G)
APT1201R4SFLL(G)
1200V 9A 1.50
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with Microsem's
patented metal gate structure.
TO-247
D3PAK
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT1201R4B_SFLL UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
1200
9
36
±30
±40
300
2.40
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
9
30
1210
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 4.5A)
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
1200
3
1.50
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
Volts
Ohms
µA
nA
Volts




 APT1201R4BFLLG
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 10V
VDD = 600V
ID = 9A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 9A @ 25°C
RG = 1.6
INDUCTIVE SWITCHING @ 25°C
VDD = 800V, VGS = 15V
ID = 9A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 800V, VGS = 15V
ID = 9A, RG = 4.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 9A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -ID 9A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -ID 9A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -ID 9A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
MIN
MIN
APT1201R4B_SFLL
TYP MAX UNIT
2030
310
pF
60
75
10 nC
50
8
5 ns
27
11
500
XX µJ
545
18
TYP MAX UNIT
9 Amps
36
1.3 Volts
18 V/ns
210 ns
710
0.7 µC
2.0
10
15 Amps
TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.42
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 29.9mH, RG = 25, Peak IL = 9A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID9A di/dt 700A/µs VR 1200 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.40
0.35
0.30
0.9
0.7
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0




 APT1201R4BFLLG
Typical Performance Curves
Dissipated Power
(Watts)
TJ ( C)
TC ( C)
0.164
0.257
0.0022
0.060
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
25
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
40
30
20 TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0 2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE4, TRANSFERCHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASE TEMPERATURE
2.5
ID = 4.5A
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT1201R4B_SFLL
20
18 VGS =15,10 & 8V
16 7V
14
12
10 6.5V
08
06 6V
04
5.5V
02
0 5V
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
VGS = 10V @ 4.5A
1.20
1.10
1.00
VGS=10V
VGS=20V
0.90
0.80 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE



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