Power MOSFET
APT1201R4BFLL(G) APT1201R4SFLL(G)
1200V 9A 1.50 Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, ...
Description
APT1201R4BFLL(G) APT1201R4SFLL(G)
1200V 9A 1.50 Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with Microsem's
patented metal gate structure.
TO-247
D3PAK
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package
D
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified. APT1201R4B_SFLL UNIT
VDSS ID IDM
VGS VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
1200 9 36
±30 ±40 300 2.40
Volts Amps
Volts Watts W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 9 30 1210
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On...
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