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Junction Transistor. A-GA10JT12 Datasheet

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Junction Transistor. A-GA10JT12 Datasheet






A-GA10JT12 Transistor. Datasheet pdf. Equivalent




A-GA10JT12 Transistor. Datasheet pdf. Equivalent





Part

A-GA10JT12

Description

Super Junction Transistor



Feature


Device under development A-GA10JT12 No rmally – OFF Silicon Carbide Super Ju nction Transistor VDS I D RDS(ON) = 1 200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Be st in class temperature independent swi tching and blocking performance • Low est VDS(ON) as compared to any other Si C switch •Suitable for connecting an anti-parallel diode •Gate o.
Manufacture

GeneSiC

Datasheet
Download A-GA10JT12 Datasheet


GeneSiC A-GA10JT12

A-GA10JT12; xide free SiC switch •Positive temper ature coefficient for easy paralleling •Low gate charge •Low intrinsic c apacitance Advantages • Low switching losses •Higher efficiency Package D G S Applications • Ideal for Aero space and Defense Applications •Down Hole Oil Drilling, Geothermal Instrume ntation •Hybrid Electric Vehicles (H EV) •Solar Inverters • Switched-M.


GeneSiC A-GA10JT12

ode Power Supply (SMPS) •Power Factor Correction (PFC) • Induction Heating • Uninterruptible Power Supply (UPS) • Motor Drives Maximum Ratings, at Tj = 175 °C, unless otherwise specifie d Parameter Drain – Source Voltage D C-Drain Current Gate Peak Current Power dissipation Operating and storage temp erature Symbol VDS IDM IGM Ptot Tj, Ts tg Conditions TC ” 140 °C TC.


GeneSiC A-GA10JT12

= 25 °C Values 1200 7 1.5 159 -55 to 175 Unit V A A W °C Electrical Chara cteristics, at Tj = 175 °C, unless oth erwise specified Parameter Drain – S ource On resistance Drain leakage curre nt Symbol RDS(ON) IDSS Conditions IF = 7 A, Tj = 25 °C IF = 7 A, Tj = 175 C VR = 1200 V, Tj = 25 °C VR = 1200 V , Tj = 175 °C Thermal Characteristics Thermal resistance, juncti.

Part

A-GA10JT12

Description

Super Junction Transistor



Feature


Device under development A-GA10JT12 No rmally – OFF Silicon Carbide Super Ju nction Transistor VDS I D RDS(ON) = 1 200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Be st in class temperature independent swi tching and blocking performance • Low est VDS(ON) as compared to any other Si C switch •Suitable for connecting an anti-parallel diode •Gate o.
Manufacture

GeneSiC

Datasheet
Download A-GA10JT12 Datasheet




 A-GA10JT12
A-GA10JT12
Normally – OFF Silicon Carbide
Super Junction Transistor
VDS
I
D
RDS(ON)
= 1200 V
= 7A
= 220 mȍ
Features
225 oC maximum operating temperature
Best in class temperature independent switching
and blocking performance
Lowest VDS(ON) as compared to any other SiC switch
Suitable for connecting an anti-parallel diode
Gate oxide free SiC switch
Positive temperature coefficient for easy paralleling
Low gate charge
Low intrinsic capacitance
Advantages
Low switching losses
Higher efficiency
Package
D
G
S
Applications
Ideal for Aerospace and Defense Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Maximum Ratings, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source Voltage
DC-Drain Current
Gate Peak Current
Power dissipation
Operating and storage temperature
Symbol
VDS
IDM
IGM
Ptot
Tj, Tstg
Conditions
TC ” 140 °C
TC = 25 °C
Values
1200
7
1.5
159
-55 to 175
Unit
V
A
A
W
°C
Electrical Characteristics, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source On resistance
Drain leakage current
Symbol
RDS(ON)
IDSS
Conditions
IF = 7 A, Tj = 25 °C
IF = 7 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
Thermal Characteristics
Thermal resistance, junction - case
RthJC
min.
Values
typ.
220
390
0.1
0.5
max.
Unit
mȍ
μA
0.95
°C/W
January 2011
Preliminary Datasheet
http://www.genesicsemi.com
Page 1 of 3




 A-GA10JT12
A-GA10JT12
Figure 1: Typical Output Characteristics at 25 oC
Figure 2: Typical Output Characteristics at 125 oC
Figure 3: Typical Output Characteristics at 175 oC
Figure 4: Typical Drain Source On-resistance
Figure 5: Typical Blocking Characteristics
January 2011
Figure 6: Typical Gate Source I-V Characteristics
Preliminary Datasheet
http://www.genesicsemi.com
Page 2 of 3




 A-GA10JT12
A-GA10JT12
Figure 7: Typical C-V Characteristics
Date
2011/01/19
Revision History
Revision
Comments
Preliminary product released for sampling. This device is
1
fast-evolving with a lower targeted Gate Current
requirement. Device performance is not guaranteed to match
this datasheet.
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury
and/or property damage.
January 2011
Preliminary Datasheet
http://www.genesicsemi.com
Page 3 of 3



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