A-GA10JT12

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features 225 oC maximum operating temperature Best in class temperature independent switching and blocking performance Lowest VDS(ON) as compared to any other SiC switch Suitable for connecting an anti-parallel diode Gate oxide free SiC switch Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic capacitance Advantages Low switching losses Higher efficiency Package D G S Applications Ideal for Aerospace and Defense Applications Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Maximum Ratings, at Tj = 175 °C, unless otherwise specified Parameter Drain – Source Voltage DC-Drain Current Gate Peak Current Power dissipation Operating and storage temperature Symbol VDS IDM IGM Ptot Tj, Tstg Conditions TC ” 140 °C TC = 25 °C Values 1200 7 1.5 159 -55 to 175 Unit V A A W °C Electrical Characteristics, at Tj = 175 °C, unless otherwise specified Parameter Drain – Source On resistance Drain leakage current Symbol RDS(ON) IDSS Conditions IF = 7 A, Tj = 25 °C IF = 7 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C Thermal Characteristics Thermal resistance, junction - case RthJC mi...