Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction Transistor
VDS I
D
RDS(ON)
= 1200 ...
Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction
Transistor
VDS I
D
RDS(ON)
= 1200 V
= 7A = 220 mȍ
Features
225 oC maximum operating temperature Best in class temperature independent switching
and blocking performance Lowest VDS(ON) as compared to any other SiC switch Suitable for connecting an anti-parallel diode Gate oxide free SiC switch Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic capacitance
Advantages
Low switching losses Higher efficiency
Package
D
G
S
Applications
Ideal for Aerospace and Defense Applications Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives
Maximum Ratings, at Tj = 175 °C, unless otherwise specified
Parameter Drain – Source Voltage DC-Drain Current Gate Peak Current Power dissipation Operating and storage temperature
Symbol
VDS IDM IGM Ptot Tj, Tstg
Conditions TC 140 °C TC = 25 °C
Values 1200
7 1.5 159 -55 to 175
Unit V A A W °C
Electrical Characteristics, at Tj = 175 °C, unless otherwise specified
Parameter Drain – Source On resistance Drain leakage current
Symbol RDS(ON) IDSS
Conditions
IF = 7 A, Tj = 25 °C IF = 7 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C
Thermal Characteristics Thermal resistance, junction - case
RthJC
mi...