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GA20JT12-247 Dataheets PDF



Part Number GA20JT12-247
Manufacturers GeneSiC
Logo GeneSiC
Description Normally - OFF Silicon Carbide Junction Transistor
Datasheet GA20JT12-247 DatasheetGA20JT12-247 Datasheet (PDF)

Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  Hi.

  GA20JT12-247   GA20JT12-247



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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant D GA20JT12-247 VDS RDS(ON) ID (Tc = 25°C) ID (Tc > 125°C) hFE (Tc = 25°C) = = = = = 1200 V 50 mΩ 45 A 20 A 96 S GD TO-247 Applications  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC)  Induction Heating  Uninterruptible Power Supply (UPS)  Motor Drives Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the GA20JT12-247.............................................................................................................7 Section VI: Package Dimensions ................................................................................................................. 11 Section VII: SPICE Model Parameters ......................................................................................................... 12 Section I: Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Current Continuous Drain Current Continuous Gate Current Turn-Off Safe Operating Area Short Circuit Safe Operating Area Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Storage Temperature Symbol VDS ID ID IG RBSOA SCSOA VSG VSD Ptot Tstg VGS = 0 V TC = 25°C TC = 145°C Conditions TVJ = 175 oC, Clamped Inductive Load TVJ = 175 oC, IG = 1 A, VDS = 800 V, Non Repetitive TC = 25 °C / 145 °C, tp > 100 ms Value 1200 45 20 1.3 ID,max = 20 @ VDS ≤ VDSmax >20 30 25 282 / 56 -55 to 175 Unit V A A A A Notes Fig. 17 Fig. 17 Fig. 19 µs V V W Fig. 16 °C Jan 2015 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg 1 of 11 Section II: Static Electrical Characteristics Parameter Symbol Conditions A: On State Drain – Source On Resistance Gate – Source Saturation Voltage DC Current Gain B: Off State Drain Leakage Current Gate Leakage Current C: Thermal Thermal resistance, junction - case RDS(ON) VGS,SAT hFE ID = 20 A, Tj = 25 °C ID = 20 A, Tj = 150 °C ID = 20 A, Tj = 175 °C ID = 20 A, ID/IG = 40, Tj = 25 °C ID = 20 A, ID/IG = 30, Tj = 175 °C VDS = 8 V, ID = 20 A, Tj = 25 °C VDS = 8 V, ID = 20 A, Tj = 125 °C VDS = 8 V, ID = 20 A, Tj = 175 °C IDSS ISG VDS = 1200 V, VGS = 0 V, Tj = 25 °C VDS = 1200 V, VGS = 0 V, Tj = 150 °C VDS = 1200 V, VGS = 0 V, Tj = 175 °C VSG = 20 V, Tj = 25 °C RthJC Section III: Dynamic Electrical Characteristics GA20JT12-247 Min. Value Typical Max. Unit Notes 50 93 mΩ Fig. 4 109 3.44 3.24 V Fig. 7 96 62 – Fig. 5 56 0.1 0.1 μA Fig. 8 0.2 20 nA 0.53 °C/W Fig. 20 Parameter Symbol Conditions Min. A: Capacitance and Gate Charge Input Capacitance Reverse Transfer/Output Capacitance Output Capacitance Stored Energy Effective Output Capacitance, time related Effective Output Capacitance, energy related Gate-Source Charge Gate-Drain Charge Gate Charge - Total B: Switching1 Ciss Crss/Coss EOSS Coss,tr VGS = 0 V, VDS = 800 V, f = 1 MHz VDS = 800 V, f = 1 MHz VGS = 0 V, VDS = 800 V, f = 1 MHz ID = constant, VGS = 0 V, VDS = 0…800 V Coss,er QGS QGD QG VGS = 0 V, VDS = 0…800 V VGS = -5…3 V VGS = 0 V, VDS = 0…800 V Internal Gate Resistance – zero bias Internal Gate Resistance – ON Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy RG(INT-ZERO) RG(INT-ON) td(on) tf td(off) tr td(on) tf td(off) tr Eon Eoff Etot Eon Eoff Etot f = 1 MHz, VAC = 50 mV, VDS = 0 V, VGS = 0 V, Tj = 175 ºC VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC Tj = 25 ºC, VDS = 800 V, ID = 20 A, Resistive Load Refer to Section V for additional driving information. Tj = 175 ºC, VDS = 800 V, ID = 20 A, Resistive Load Tj = 25 ºC, VDS = 800 V, ID =.


APL602LG GA20JT12-247 GA15IDDJT22-FR4


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