Junction Transistor. GA20JT12-247 Datasheet

GA20JT12-247 Transistor. Datasheet pdf. Equivalent


GeneSiC GA20JT12-247
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA20JT12-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1200 V
50 mΩ
45 A
20 A
96
S
GD
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA20JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
45
20
1.3
ID,max = 20
@ VDS ≤ VDSmax
>20
30
25
282 / 56
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11


GA20JT12-247 Datasheet
Recommendation GA20JT12-247 Datasheet
Part GA20JT12-247
Description Normally - OFF Silicon Carbide Junction Transistor
Feature GA20JT12-247; Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature .
Manufacture GeneSiC
Datasheet
Download GA20JT12-247 Datasheet




GeneSiC GA20JT12-247
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain Source On Resistance
Gate Source Saturation Voltage
DC Current Gain
B: Off State
Drain Leakage Current
Gate Leakage Current
C: Thermal
Thermal resistance, junction - case
RDS(ON)
VGS,SAT
hFE
ID = 20 A, Tj = 25 °C
ID = 20 A, Tj = 150 °C
ID = 20 A, Tj = 175 °C
ID = 20 A, ID/IG = 40, Tj = 25 °C
ID = 20 A, ID/IG = 30, Tj = 175 °C
VDS = 8 V, ID = 20 A, Tj = 25 °C
VDS = 8 V, ID = 20 A, Tj = 125 °C
VDS = 8 V, ID = 20 A, Tj = 175 °C
IDSS
ISG
VDS = 1200 V, VGS = 0 V, Tj = 25 °C
VDS = 1200 V, VGS = 0 V, Tj = 150 °C
VDS = 1200 V, VGS = 0 V, Tj = 175 °C
VSG = 20 V, Tj = 25 °C
RthJC
Section III: Dynamic Electrical Characteristics
GA20JT12-247
Min.
Value
Typical
Max. Unit
Notes
50
93 Fig. 4
109
3.44
3.24
V Fig. 7
96
62 Fig. 5
56
0.1
0.1 μA Fig. 8
0.2
20 nA
0.53
°C/W Fig. 20
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
B: Switching1
Ciss
Crss/Coss
EOSS
Coss,tr
VGS = 0 V, VDS = 800 V, f = 1 MHz
VDS = 800 V, f = 1 MHz
VGS = 0 V, VDS = 800 V, f = 1 MHz
ID = constant, VGS = 0 V, VDS = 0…800 V
Coss,er
QGS
QGD
QG
VGS = 0 V, VDS = 0…800 V
VGS = -5…3 V
VGS = 0 V, VDS = 0…800 V
Internal Gate Resistance zero bias
Internal Gate Resistance ON
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
RG(INT-ZERO)
RG(INT-ON)
td(on)
tf
td(off)
tr
td(on)
tf
td(off)
tr
Eon
Eoff
Etot
Eon
Eoff
Etot
f = 1 MHz, VAC = 50 mV, VDS = 0 V,
VGS = 0 V, Tj = 175 ºC
VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC
Tj = 25 ºC, VDS = 800 V,
ID = 20 A, Resistive Load
Refer to Section V for additional
driving information.
Tj = 175 ºC, VDS = 800 V,
ID = 20 A, Resistive Load
Tj = 25 ºC, VDS = 800 V,
ID = 20 A, Inductive Load
Refer to Section V.
Tj = 175 ºC, VDS = 800 V,
ID = 20 A, Inductive Load
1 All times are relative to the Drain-Source Voltage VDS
Value
Typical
3091
53
22
96
70
23
77
100
1.7
0.13
12
14
24
12
15
13
30
10
316
40
356
298
28
326
Max. Unit Notes
pF Fig. 9
pF Fig. 9
µJ Fig. 10
pF
pF
nC
nC
nC
Ω
Ω
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 2 of 11



GeneSiC GA20JT12-247
Section IV: Figures
A: Static Characteristic Figures
GA20JT12-247
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: On-Resistance vs. Gate Current
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 3 of 11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)