Document
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Package
RoHS Compliant D
GA20JT12-247
VDS RDS(ON) ID (Tc = 25°C) ID (Tc > 125°C) hFE (Tc = 25°C)
= = = = =
1200 V 50 mΩ 45 A 20 A 96
S GD
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the GA20JT12-247.............................................................................................................7 Section VI: Package Dimensions ................................................................................................................. 11 Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter Drain – Source Voltage Continuous Drain Current Continuous Drain Current Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Storage Temperature
Symbol VDS ID ID IG
RBSOA
SCSOA
VSG VSD Ptot Tstg
VGS = 0 V TC = 25°C TC = 145°C
Conditions
TVJ = 175 oC, Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V, Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value 1200
45 20 1.3 ID,max = 20 @ VDS ≤ VDSmax
>20
30 25 282 / 56 -55 to 175
Unit V A A A
A
Notes
Fig. 17 Fig. 17
Fig. 19
µs
V V W Fig. 16 °C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain – Source On Resistance Gate – Source Saturation Voltage DC Current Gain
B: Off State
Drain Leakage Current Gate Leakage Current
C: Thermal Thermal resistance, junction - case
RDS(ON) VGS,SAT
hFE
ID = 20 A, Tj = 25 °C ID = 20 A, Tj = 150 °C ID = 20 A, Tj = 175 °C
ID = 20 A, ID/IG = 40, Tj = 25 °C ID = 20 A, ID/IG = 30, Tj = 175 °C
VDS = 8 V, ID = 20 A, Tj = 25 °C VDS = 8 V, ID = 20 A, Tj = 125 °C VDS = 8 V, ID = 20 A, Tj = 175 °C
IDSS ISG
VDS = 1200 V, VGS = 0 V, Tj = 25 °C VDS = 1200 V, VGS = 0 V, Tj = 150 °C VDS = 1200 V, VGS = 0 V, Tj = 175 °C
VSG = 20 V, Tj = 25 °C
RthJC
Section III: Dynamic Electrical Characteristics
GA20JT12-247
Min.
Value Typical
Max. Unit
Notes
50 93 mΩ Fig. 4
109
3.44 3.24
V Fig. 7
96 62 – Fig. 5
56
0.1 0.1 μA Fig. 8 0.2
20 nA
0.53
°C/W Fig. 20
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance Reverse Transfer/Output Capacitance Output Capacitance Stored Energy Effective Output Capacitance, time related Effective Output Capacitance, energy related Gate-Source Charge Gate-Drain Charge Gate Charge - Total
B: Switching1
Ciss Crss/Coss
EOSS
Coss,tr
VGS = 0 V, VDS = 800 V, f = 1 MHz VDS = 800 V, f = 1 MHz VGS = 0 V, VDS = 800 V, f = 1 MHz
ID = constant, VGS = 0 V, VDS = 0…800 V
Coss,er
QGS QGD QG
VGS = 0 V, VDS = 0…800 V
VGS = -5…3 V VGS = 0 V, VDS = 0…800 V
Internal Gate Resistance – zero bias
Internal Gate Resistance – ON Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy
RG(INT-ZERO)
RG(INT-ON) td(on) tf td(off) tr td(on) tf td(off) tr Eon Eoff Etot Eon Eoff Etot
f = 1 MHz, VAC = 50 mV, VDS = 0 V, VGS = 0 V, Tj = 175 ºC VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC
Tj = 25 ºC, VDS = 800 V, ID = 20 A, Resistive Load Refer to Section V for additional driving information.
Tj = 175 ºC, VDS = 800 V, ID = 20 A, Resistive Load
Tj = 25 ºC, VDS = 800 V, ID =.