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Gate Driver. GA15IDDJT22-FR4 Datasheet

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Gate Driver. GA15IDDJT22-FR4 Datasheet






GA15IDDJT22-FR4 Driver. Datasheet pdf. Equivalent




GA15IDDJT22-FR4 Driver. Datasheet pdf. Equivalent





Part

GA15IDDJT22-FR4

Description

Non-Isolated Gate Driver



Feature


Non-Isolated Gate Driver Gate Driver for SiC SJT with Signal Isolation Feature s Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple internal voltage level topology for low drive losses Point-o f-load (POL), non-isolated design 5000 V Signal Isolation (up to 10 s) Capab le of high gate currents with 27 W maxi mum power RoHS Co.
Manufacture

GeneSiC

Datasheet
Download GA15IDDJT22-FR4 Datasheet


GeneSiC GA15IDDJT22-FR4

GA15IDDJT22-FR4; mpliant Product Image GA15IDDJT22-FR4 VISO,SIG PDRIVE fmax = 5000 V = 27 W = 350 kHz Section I: Introduction The GA15IDDJT22-FR4 provides an optimized g ate drive solution for 10 and 20 mΩ S iC Junction Transistors (SJT). The boar d utilizes DC/DC converters and FOD3182 signal opto-isolation as well as totem -pole gate driver ICs providing fast sw itching and customiz.


GeneSiC GA15IDDJT22-FR4

able continuous gate currents necessary for any SJT device. Its footprint and 1 2 V supply voltage make it a plug-in re placement for existing SiC MOSFET gate drive solutions. Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram Section II: Compatibility with SiC SJTs The GA15IDDJT22-FR4 has an ins talled gate resistance (RG) of 0.7 Ω on-board which may n.


GeneSiC GA15IDDJT22-FR4

eed to be modified by the user for safe operation of certain SJT parts. Please see the table below and Section VI for more information. Table 1: GA15IDDJT22 -FR4 – SiC SJT Compatibility Informat ion Table SJT Part Number Compatible Notes GA03JT12-247 GA05JT12-247/263 G A06JT12-247 GA10JT12-247/263 GA20JT12-2 47/263 GA50JT12-247 GA100JT12-227 GA04J T17-247 GA16JT17-247.

Part

GA15IDDJT22-FR4

Description

Non-Isolated Gate Driver



Feature


Non-Isolated Gate Driver Gate Driver for SiC SJT with Signal Isolation Feature s Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple internal voltage level topology for low drive losses Point-o f-load (POL), non-isolated design 5000 V Signal Isolation (up to 10 s) Capab le of high gate currents with 27 W maxi mum power RoHS Co.
Manufacture

GeneSiC

Datasheet
Download GA15IDDJT22-FR4 Datasheet




 GA15IDDJT22-FR4
Non-Isolated Gate Driver
Gate Driver for SiC SJT with
Signal Isolation
Features
Requires single 12 V voltage supply
Pin Out compatible with MOSFET driver boards
Multiple internal voltage level topology for low drive losses
Point-of-load (POL), non-isolated design
5000 V Signal Isolation (up to 10 s)
Capable of high gate currents with 27 W maximum power
RoHS Compliant
Product Image
GA15IDDJT22-FR4
VISO,SIG
PDRIVE
fmax
= 5000 V
= 27 W
= 350 kHz
Section I: Introduction
The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 mSiC Junction Transistors (SJT). The board utilizes DC/DC
converters and FOD3182 signal opto-isolation as well as totem-pole gate driver ICs providing fast switching and customizable continuous gate
currents necessary for any SJT device. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC MOSFET gate drive
solutions.
Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram
Section II: Compatibility with SiC SJTs
The GA15IDDJT22-FR4 has an installed gate resistance (RG) of 0.7 on-board which may need to be modified by the user for safe operation
of certain SJT parts. Please see the table below and Section VI for more information.
Table 1: GA15IDDJT22-FR4 – SiC SJT Compatibility Information Table
SJT Part Number
Compatible
Notes
GA03JT12-247
GA05JT12-247/263
GA06JT12-247
GA10JT12-247/263
GA20JT12-247/263
GA50JT12-247
GA100JT12-227
GA04JT17-247
GA16JT17-247
GA50JT17-247
GA100JT17-227
GA50SICP12-227
GA100SICP12-227
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes
Yes Reduction of RG values recommended (Section VI)
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes
Yes Reduction of RG values recommended (Section VI)
Yes
Yes Reduction of RG values recommended (Section VI)
Sept. 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 9




 GA15IDDJT22-FR4
Non-Isolated Gate Driver GA15IDDJT22-FR4
Section III: Operational Characteristics
Parameter
Input Supply Voltage
Input Signal Voltage, Off
Input Signal Voltage, On
Input Signal Current, On
Propagation Delay, Signal Turn On
Propagation Delay, Signal Turn Off
Output Gate Current, Peak
Output Gate Current, Continuous
Output Gate Voltage Rise Time
Output Gate Voltage Fall Time
Operating Frequency
Power Dissipation
SJT Drain – Source Voltage
Isolation Voltage, Signal
Storage Temperature
Product Weight
Symbol
VCC
Vsig, OFF
Vsig, ON
Isig, ON
td,ON
td,OFF
IG,ON
IG,steady
tr
tf
fsw
Ptot
VDS
VISO-SIG
T
Conditions
VCC High, VCC Low
f < 350 kHz
Cload = 50 nF
Cload = 50 nF
Dependant on installed CG values
25.0 W (VGL) + 2.0 W (VGH + VEE)
On driven power transistor
Min.
10.8
-5
3.2
20
-55
Value
Typical
12
0
5.0
36
160
187
7
2.0
40
25
30
Max.
13.2
0.8
6.4
50
270
270
15
5
70
60
350
27.0
1700
±5000
100
Unit
V
V
V
mA
ns
ns
A
A
ns
ns
kHz
W
V
V
°C
g
Notes
Section IV: Pin Out Description
VCC Low RTN
VCC Low
Signal RTN
Signal
VCC High RTN
VCC High
Source
Source
Source
Gate
Gate
Gate
Header
JP1
JP1
JP1
JP1
JP1
JP1
Gate
Gate
Gate
Source
Source
Source
Figure 2: Gate Drive Board Top View
Table 2: GA15IDDJT22-FR4 Pin Out Connections
Pin Label
Suggested Connection
VCC High
+ 12 V, > 30 W Supply
VCC High RTN
Signal
Signal RTN
VCC Low
Analog Ground
Gate Drive Control Signal
Analog Ground
+ 12 V, > 30 W Supply
VCC Low RTN
Analog Ground
Gate
Gate
Gate
Source
SJT Gate Pin
SJT Gate Pin
SJT Gate Pin
SJT Source/GR Pin
Source
Source
SJT Source/GR Pin
SJT Source/GR Pin
Sept. 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 2 of 9




 GA15IDDJT22-FR4
Non-Isolated Gate Driver GA15IDDJT22-FR4
Section V: SJT Gate Driving Theory of Operation
The SJT transistor is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal
gate current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 3. This is similar to what
the GA15IDDJT22-FR4 provides.
An SJT is rapidly switched on when the necessary gate charge, QG, for turn-on is supplied by a burst of high gate current, IG,on, until the gate-
source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
,
The IG,pon pulse should ideally terminate, when the drain voltage falls to its on-state value, in order to avoid unnecessary drive losses during
the steady on-state. In practice, the rise time of the IG,on pulse is affected by the parasitic inductances, Lpar in the device package and drive
circuit. A voltage developed across the parasitic inductance in the source path, Ls, can de-bias the gate-source junction, when high drain
currents begin to flow through the device. The applied gate voltage should be maintained high enough, above the VGS,ON level to counter
these effects.
After the SJT is turned on, IG may be lowered to IG,steady for reducing unnecessary gate drive power losses. The minimum IG,steady is determined
by noting the DC current gain, hFE, of the device from its datasheet. The desired IG,steady is determined by the peak device junction temperature
TJ during operation, drain current ID, DC current gain hFE, and a 50 % safety margin to ensure operating the device in the saturation region with
low on-state voltage drop by the equation:
, , 1.5
For SJT turn -off, a high negative peak current, -IG,off at the start of the turn-off transition rapidly sweeps out charge from the gate. While
satisfactory turn off can be achieved with VGS = 0 V, a negative gate voltage VGS may be used in order to speed up the turn-off transition. The
GA15IDDJT22-FR4 provides a negative bias of -8.7 V during off state.
Figure 3: Idealized SJT Gate Current Waveform
Sept. 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 3 of 9



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