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Junction Transistor. GA50JT12-247 Datasheet

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Junction Transistor. GA50JT12-247 Datasheet






GA50JT12-247 Transistor. Datasheet pdf. Equivalent




GA50JT12-247 Transistor. Datasheet pdf. Equivalent





Part

GA50JT12-247

Description

Normally - OFF Silicon Carbide Junction Transistor



Feature


Normally – OFF Silicon Carbide Junctio n Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Tempera ture Independent Switching Performance Low Output Capacitance Positive Tempe rature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode A dvantages Compatible.
Manufacture

GeneSiC

Datasheet
Download GA50JT12-247 Datasheet


GeneSiC GA50JT12-247

GA50JT12-247; with Si MOSFET/IGBT Gate Drive ICs > 2 0 µs Short-Circuit Withstand Capabilit y Lowest-in-class Conduction Losses H igh Circuit Efficiency Minimal Input S ignal Distortion High Amplifier Bandwi dth Package RoHS Compliant D GA50JT1 2-247 VDS RDS(ON) ID (Tc = 25°C) ID ( Tc > 125°C) hFE (Tc = 25°C) = = = = = 1200 V 20 mΩ 100 A 50 A 104 G DS T O-247 Applications Dow.


GeneSiC GA50JT12-247

n Hole Oil Drilling, Geothermal Instrume ntation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptib le Power Supply (UPS) Motor Drives Ta ble of Contents Section I: Absolute Max imum Ratings .......................... ....................................... ...................


GeneSiC GA50JT12-247

........................1 Section II: St atic Electrical Characteristics........ ....................................... ....................................... ..............2 Section III: Dynamic El ectrical Characteristics .............. ....................................... ....................................... .2 Section IV: Figures ................ ...................

Part

GA50JT12-247

Description

Normally - OFF Silicon Carbide Junction Transistor



Feature


Normally – OFF Silicon Carbide Junctio n Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Tempera ture Independent Switching Performance Low Output Capacitance Positive Tempe rature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode A dvantages Compatible.
Manufacture

GeneSiC

Datasheet
Download GA50JT12-247 Datasheet




 GA50JT12-247
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA50JT12-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1200 V
20 mΩ
100 A
50 A
104
G DS
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
583 / 116
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11




 GA50JT12-247
GA50JT12-247
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain Source On Resistance
Gate Source Saturation Voltage
DC Current Gain
B: Off State
Drain Leakage Current
Gate Leakage Current
C: Thermal
Thermal resistance, junction - case
RDS(ON)
VGS,SAT
hFE
ID = 50 A, Tj = 25 °C
ID = 50 A, Tj = 150 °C
ID = 50 A, Tj = 175 °C
ID = 50 A, ID/IG = 40, Tj = 25 °C
ID = 50 A, ID/IG = 30, Tj = 175 °C
VDS = 8 V, ID = 50 A, Tj = 25 °C
VDS = 8 V, ID = 50 A, Tj = 125 °C
VDS = 8 V, ID = 50 A, Tj = 175 °C
IDSS
ISG
VDS = 1200 V, VGS = 0 V, Tj = 25 °C
VDS = 1200 V, VGS = 0 V, Tj = 150 °C
VDS = 1200 V, VGS = 0 V, Tj = 175 °C
VSG = 20 V, Tj = 25 °C
RthJC
Section III: Dynamic Electrical Characteristics
Min.
Value
Typical
Max. Unit
Notes
20
36 Fig. 4
42
3.42
3.23
V Fig. 7
104
65 Fig. 5
58
0.1
0.1 μA Fig. 8
0.2
20 nA
0.26
°C/W Fig. 20
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
B: Switching1
Ciss
Crss/Coss
EOSS
Coss,tr
VGS = 0 V, VDS = 800 V, f = 1 MHz
VDS = 800 V, f = 1 MHz
VGS = 0 V, VDS = 800 V, f = 1 MHz
ID = constant, VGS = 0 V, VDS = 0…800 V
Coss,er
QGS
QGD
QG
VGS = 0 V, VDS = 0…800 V
VGS = -5…3 V
VGS = 0 V, VDS = 0…800 V
Internal Gate Resistance zero bias
Internal Gate Resistance ON
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
RG(INT-ZERO)
RG(INT-ON)
td(on)
tf
td(off)
tr
td(on)
tf
td(off)
tr
Eon
Eoff
Etot
Eon
Eoff
Etot
f = 1 MHz, VAC = 50 mV, VDS = 0 V,
VGS = 0 V, Tj = 175 ºC
VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC
Tj = 25 ºC, VDS = 800 V,
ID = 50 A, Inductive Load
Refer to Section V for additional
driving information.
Tj = 175 ºC, VDS = 800 V,
ID = 50 A, Inductive Load
Tj = 25 ºC, VDS = 800 V,
ID = 50 A, Inductive Load
Refer to Section V.
Tj = 175 ºC, VDS = 800 V,
ID = 50 A, Inductive Load
1 All times are relative to the Drain-Source Voltage VDS
Value
Typical
7209
124
51
231
160
55
184
239
0.58
0.09
16
45
33
21
16
45
42
19
1063
357
1420
1032
317
1349
Max. Unit Notes
pF Fig. 9
pF Fig. 9
µJ Fig. 10
pF
pF
nC
nC
nC
Ω
Ω
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 2 of 11




 GA50JT12-247
Section IV: Figures
A: Static Characteristic Figures
GA50JT12-247
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: On-Resistance vs. Gate Current
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 3 of 11



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