Power-Transistor. IPD160N04LG Datasheet

IPD160N04LG Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPD160N04LG
Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD160N04L G
Product Summary
V DS
R DS(on),max
ID
IPD160N04L G
40 V
16 m
30 A
Package
Marking
PG-TO252-3
160N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25
Value
30
23
28
20
210
30
5
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-06


IPD160N04LG Datasheet
Recommendation IPD160N04LG Datasheet
Part IPD160N04LG
Description Power-Transistor
Feature IPD160N04LG; Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology fo.
Manufacture Infineon Technologies
Datasheet
Download IPD160N04LG Datasheet




Infineon Technologies IPD160N04LG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD160N04L G
Value
31
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 4.9 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=10 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
40
1.2
-
-
-
0.1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=40 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=20 A
V GS=10 V, I D=30 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
-
22
10 100
10 100 nA
18.4
23 m
13.3
16
1.2 -
43 - S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
2007-12-06



Infineon Technologies IPD160N04LG
Parameter
Symbol Conditions
IPD160N04L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=20 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=20 V, I D=30 A,
V GS=0 to 10 V
Qg
V DD=20 V, I D=30 A,
V GS=0 to 4.5 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=20 V, V GS=0 V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
5) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
900 1200 pF
230 310
11 -
3.0 - ns
1.8 -
12 -
2.4 -
3.2 - nC
1.4 -
1.3 -
3.0 -
11 15
3.6 - V
5.5 7.3 nC
11 -
8.6 -
-
-
0.96
26 A
210
1.2 V
25 - nC
2007-12-06







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