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Power-Transistor. IPD170N04NG Datasheet

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Power-Transistor. IPD170N04NG Datasheet






IPD170N04NG Power-Transistor. Datasheet pdf. Equivalent




IPD170N04NG Power-Transistor. Datasheet pdf. Equivalent





Part

IPD170N04NG

Description

Power-Transistor



Feature


Type OptiMOS®3 Power-Transistor Featur es • Fast switching MOSFET for SMPS Optimized technology for DC/DC conve rters • Qualified according to JEDEC1 ) for target applications • N-channel , normal level • Excellent gate charg e x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalan che tested • Pb-free plating; RoHS co mpliant Type IPD170N04N G Produc.
Manufacture

Infineon Technologies

Datasheet
Download IPD170N04NG Datasheet


Infineon Technologies IPD170N04NG

IPD170N04NG; t Summary V DS R DS(on),max ID IPD170N0 4N G 40 V 17 mΩ 30 A Package Marking PG-TO252-3 170N04N Maximum ratings, at T j=25 °C, unless otherwise specifi ed Parameter Symbol Conditions Conti nuous drain current Pulsed drain curren t2) Avalanche current, single pulse3) A valanche energy, single pulse Gate sour ce voltage 1) J-STD20 and JESD22 ID I D,pulse I AS E AS V G.


Infineon Technologies IPD170N04NG

S V GS=10 V, T C=25 °C V GS=10 V, T C= 100 °C T C=25 °C T C=25 °C I D=30 A, R GS=25 Ω Value 30 23 210 30 5 ±20 Unit A mJ V Rev. 1.0 page 1 2007-1 2-11 Maximum ratings, at T j=25 °C, u nless otherwise specified Parameter S ymbol Conditions Power dissipation Ope rating and storage temperature P tot T C=25 °C T j, T stg IEC climatic cate gory; DIN IEC 68-1 IPD170N.


Infineon Technologies IPD170N04NG

04N G Value 31 -55 ... 175 55/175/56 U nit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, j unction - case SMD version, device on P CB R thJC R thJA minimal footprint 6 cm² cooling area4) - - 4.9 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified S tatic characteristics.

Part

IPD170N04NG

Description

Power-Transistor



Feature


Type OptiMOS®3 Power-Transistor Featur es • Fast switching MOSFET for SMPS Optimized technology for DC/DC conve rters • Qualified according to JEDEC1 ) for target applications • N-channel , normal level • Excellent gate charg e x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalan che tested • Pb-free plating; RoHS co mpliant Type IPD170N04N G Produc.
Manufacture

Infineon Technologies

Datasheet
Download IPD170N04NG Datasheet




 IPD170N04NG
Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD170N04N G
Product Summary
V DS
R DS(on),max
ID
IPD170N04N G
40 V
17 m
30 A
Package
Marking
PG-TO252-3
170N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25
Value
30
23
210
30
5
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-11




 IPD170N04NG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD170N04N G
Value
31
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 4.9 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=10 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
40
2
-
-
-
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=40 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=30 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
14
10 100
10 100 nA
14.2
17 m
1.2 -
28 - S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
2007-12-11




 IPD170N04NG
Parameter
Symbol Conditions
IPD170N04N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=20 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6
Q gs
Q gd
Q sw
Qg
V plateau
V DD=20 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=20 V, V GS=0 V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
660 880 pF
230 310
7.0 -
5.7 - ns
1.0 -
7.0 -
2.2 -
4.1 - nC
1.1 -
3.3 -
8.2 11
6.2 - V
7.8 - nC
8.4 -
- 26 A
- 210
1 1.2 V
30 - nC
Rev. 1.0
page 3
2007-12-11



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