MOSFET. IPD060N03LG Datasheet

IPD060N03LG MOSFET. Datasheet pdf. Equivalent


Infineon Technologies IPD060N03LG
IPD060N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
•FastswitchingMOSFETforSMPS
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel,logiclevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Avalancherated
•Pb-freeplating
•Halogen-freeaccordingtoIEC61249-2-21
•Avalancherated
•Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
6
m
ID
50
A
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPD060N03L G
Package
PG-TO252-3
Marking
060N03L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2020-09-14


IPD060N03LG Datasheet
Recommendation IPD060N03LG Datasheet
Part IPD060N03LG
Description MOSFET
Feature IPD060N03LG; IPD060N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •FastswitchingMOSFETforSMPS •Op.
Manufacture Infineon Technologies
Datasheet
Download IPD060N03LG Datasheet




Infineon Technologies IPD060N03LG
OptiMOSª3Power-Transistor,30V
IPD060N03LG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2020-09-14



Infineon Technologies IPD060N03LG
OptiMOSª3Power-Transistor,30V
IPD060N03LG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current1)
Avalanche current, single pulse2)
Avalanche energy, single pulse
Reversediodedv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
dv/dt
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
50
-
50
-
50
-
43
-
350
-
50
-
60
-
6
-
20
-
56
-
175
Unit Note/TestCondition
VGS=10V,TC=25°C
A
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
A TC=25°C
A TC=25°C
mJ ID=20A,RGS=25
kV/µs
ID=50A,VDS=24V,di/dt=200A/µs,
Tj,max=175°C
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB,
6 cm² cooling area3)
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
-
2.7
Unit Note/TestCondition
K/W -
-
-
75 K/W -
-
-
50 K/W -
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.2.2,2020-09-14







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