Type
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • ...
Type
OptiMOS™3 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating Halogen-free according to IEC61249-2-21 *
IPD060N03L G IPS060N03L G
IPF060N03L G IPU060N03L G
Product Summary V DS R DS(on),max ID
30 V 6 mΩ 50 A
Type
IPD060N03L G
Avalanche rated
Pb-free plating; RoHS compliant
IPF060N03L G
IPS060N03L G
IPU060N03L G
Package
PG-TO252-3
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3
Marking
060N03L
060N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
060N03L
060N03L
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
Pulsed drain current2)
I D,pulse
V GS=4.5 V, T C=100 °C
T C=25 °C
Avalanche current, single pulse3)
I AS
T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage
V GS
1) J-STD20 and JESD22 * IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia
IPS060N03L G available in HF
Rev. 2.1
page 1
50 50 50 43 350 50 60
6
±20
A
mJ kV/µs V
2010-04-07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation Operating a...