IPF060N03LG

Type OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating Halogen-free according to IEC61249-2-21 * IPD060N03L G IPS060N03L G IPF060N03L G IPU060N03L G Product Summary V DS R DS(on),max ID 30 V 6 mΩ 50 A Type IPD060N03L G Avalanche rated Pb-free plating; RoHS compliant IPF060N03L G IPS060N03L G IPU060N03L G Package PG-TO252-3 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3 Marking 060N03L 060N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 060N03L 060N03L Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C Pulsed drain current2) I D,pulse V GS=4.5 V, T C=100 °C T C=25 °C Avalanche current, single pulse3) I AS T C=25 °C Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage V GS 1) J-STD20 and JESD22 * IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia IPS060N03L G available in HF Rev. 2.1 page 1 50 50 50 43 350 50 60 6 ±20 A mJ kV/µs V 2010-04-07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating a...