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Power-Transistor. IPS060N03LG Datasheet

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Power-Transistor. IPS060N03LG Datasheet






IPS060N03LG Power-Transistor. Datasheet pdf. Equivalent




IPS060N03LG Power-Transistor. Datasheet pdf. Equivalent





Part

IPS060N03LG

Description

Power-Transistor



Feature


Type OptiMOS™3 Power-Transistor Featur es • Fast switching MOSFET for SMPS Optimized technology for DC/DC conve rters • Qualified according to JEDEC1 ) for target applications • N-channel , logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche ra ted • Pb-free plating • Halogen-fre e according to IEC61249-2-21 * IPD060.
Manufacture

Infineon Technologies

Datasheet
Download IPS060N03LG Datasheet


Infineon Technologies IPS060N03LG

IPS060N03LG; N03L G IPS060N03L G IPF060N03L G IPU060 N03L G Product Summary V DS R DS(on),m ax ID 30 V 6 mΩ 50 A Type IPD060N0 3L G • Avalanche rated • Pb-free plating; RoHS compliant IPF060N03L G IPS060N03L G IPU060N03L G Package PG -TO252-3 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3 Marking 060N03L 060N03L Maximum ratings, at T j=25 °C, unless otherwise specified Par.


Infineon Technologies IPS060N03LG

ameter Symbol Conditions 060N03L 060N 03L Value Unit Continuous drain curr ent I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C Pulsed drain current2) I D,pulse V GS=4.5 V, T C=100 °C T C=25 °C Avala nche current, single pulse3) I AS T C =25 °C Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω Reverse d iode dv /dt dv /dt I D=5.


Infineon Technologies IPS060N03LG

0 A, V DS=24 V, di /dt =200 A/µs, T j,m ax=175 °C Gate source voltage V GS 1) J-STD20 and JESD22 * IPD060N03L G HF available with SP000680632 only in Mal acca, Malaysia IPS060N03L G available i n HF Rev. 2.1 page 1 50 50 50 43 350 50 60 6 ±20 A mJ kV/µs V 2010-04-07 Maximum ratings, at T j=25 °C, unles s otherwise specified Parameter Symbo l Conditions Power dis.

Part

IPS060N03LG

Description

Power-Transistor



Feature


Type OptiMOS™3 Power-Transistor Featur es • Fast switching MOSFET for SMPS Optimized technology for DC/DC conve rters • Qualified according to JEDEC1 ) for target applications • N-channel , logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche ra ted • Pb-free plating • Halogen-fre e according to IEC61249-2-21 * IPD060.
Manufacture

Infineon Technologies

Datasheet
Download IPS060N03LG Datasheet




 IPS060N03LG
Type
OptiMOS3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating
• Halogen-free according to IEC61249-2-21 *
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
6 m
50 A
Type
IPD060N03L G
• Avalanche rated
• Pb-free plating; RoHS compliant
IPF060N03L G
IPS060N03L G
IPU060N03L G
Package
PG-TO252-3
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3
Marking
060N03L
060N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
060N03L
060N03L
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
Pulsed drain current2)
I D,pulse
V GS=4.5 V,
T C=100 °C
T C=25 °C
Avalanche current, single pulse3)
I AS
T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
1) J-STD20 and JESD22
* IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia
IPS060N03L G available in HF
Rev. 2.1
page 1
50
50
50
43
350
50
60
6
±20
A
mJ
kV/µs
V
2010-04-07




 IPS060N03LG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
Value
56
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 2.7 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance5)
R DS(on) V GS=4.5 V, I D=30 A
-
7.2
9 m
V GS=10 V, I D=30 A - 5 6
Gate resistance
RG
- 1.4 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
34
67
-S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 2.1
page 2
2010-04-07




 IPS060N03LG
Parameter
Symbol Conditions
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
6) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1700
640
35
5
3
20
3
2300 pF
850
52
- ns
-
-
-
5.6 - nC
2.8 -
2.5 -
5.3 -
10.8 14.4
3.2 - V
22 30
9.4 - nC
17 -
-
-
0.88
50 A
350
1.1 V
- 10 nC
2010-04-07



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