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Power-Transistor. BSO200P03SH Datasheet

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Power-Transistor. BSO200P03SH Datasheet






BSO200P03SH Power-Transistor. Datasheet pdf. Equivalent




BSO200P03SH Power-Transistor. Datasheet pdf. Equivalent





Part

BSO200P03SH

Description

Power-Transistor



Feature


OptiMOS™-P Power-Transistor Features P-Channel • Enhancement mode • L ogic level • 150°C operating tempera ture • Qualified according JEDEC for target applications • Pb-free lead pl ating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Sum mary V DS R DS(on),max ID BSO200P03S H -30 V 20 mΩ -9.1 A PG-DSO-8 Type B SO200P03S H Package PG-DSO-8 Markin.
Manufacture

Infineon Technologies

Datasheet
Download BSO200P03SH Datasheet


Infineon Technologies BSO200P03SH

BSO200P03SH; g 200P3S Lead free Yes Halogen free Ye s packing dry Maximum ratings, at T j =25 °C, unless otherwise specified Pa rameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C1) T A=70 °C1) T A=25 °C2) Value Unit ≤10 secs ste ady state -9.1 -7.4 A -7.3 -5.9 -36. 4 Avalanche energy, single pulse E AS I D=-9.1 A, R GS=25 Ω .


Infineon Technologies BSO200P03SH

98 mJ Gate source voltage Power dissipa tion Operating and storage temperature ESD rating V GS P tot T A=25 °C1) T j , T stg Soldering temperature IEC cli matic category; DIN IEC 68-1 ±25 2.3 6 1.56 -55 ... 150 V W °C 260 55/1 50/56 °C Rev. 1.3 page 1 2010-02-1 5 Parameter Thermal characteristics Th ermal resistance, junction - soldering point Thermal resistan.


Infineon Technologies BSO200P03SH

ce, junction - ambient Symbol Condition s BSO200P03S H min. Values typ. Uni t max. R thJS R thJA minimal footpri nt, t p≤10 s minimal footprint, stead y state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state - - 35 K/W - 110 - 150 - 53 - 80 Elect rical characteristics, at T j=25 °C, u nless otherwise specified Static chara cteristics Drain-source.

Part

BSO200P03SH

Description

Power-Transistor



Feature


OptiMOS™-P Power-Transistor Features P-Channel • Enhancement mode • L ogic level • 150°C operating tempera ture • Qualified according JEDEC for target applications • Pb-free lead pl ating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Sum mary V DS R DS(on),max ID BSO200P03S H -30 V 20 mΩ -9.1 A PG-DSO-8 Type B SO200P03S H Package PG-DSO-8 Markin.
Manufacture

Infineon Technologies

Datasheet
Download BSO200P03SH Datasheet




 BSO200P03SH
OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSO200P03S H
-30 V
20 m
-9.1 A
PG-DSO-8
Type
BSO200P03S H
Package
PG-DSO-8
Marking
200P3S
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
10 secs steady state
-9.1 -7.4 A
-7.3 -5.9
-36.4
Avalanche energy, single pulse
E AS I D=-9.1 A, R GS=25
98 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD rating
V GS
P tot T A=25 °C1)
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
2.36
1.56
-55 ... 150
V
W
°C
260
55/150/56
°C
Rev. 1.3
page 1
2010-02-15




 BSO200P03SH
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Symbol Conditions
BSO200P03S H
min.
Values
typ.
Unit
max.
R thJS
R thJA
minimal footprint,
t p10 s
minimal footprint,
steady state
6 cm2 cooling area1),
t p10 s
6 cm2 cooling area1),
steady state
-
-
-
-
-
- 35 K/W
- 110
- 150
- 53
- 80
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=0 V, I D=-250µA
V GS(th)
V DS=V GS,
I D=-100 µA
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
V DS=-30 V, V GS=0 V,
T j=125 °C
I GSS
V GS=-25 V, V DS=0 V
R DS(on) V GS=-10 V, I D=-9.1 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=-7.3 A
-30
-1
-
-
-
-
11
- -V
-1.5
-0.1 -1 µA
-10 -100
-
16.7
-100 nA
20.0
18 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 2
2010-02-15




 BSO200P03SH
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSO200P03S H
min.
Values
typ.
Unit
max.
C iss - 1750 2330 pF
C oss
V GS=0 V,
V DS=-25 V, f =1 MHz
-
470 625
C rss
- 390 580
t d(on)
tr
t d(off)
tf
V DD=-15 V,
V GS=-10 V,
I D=-1 A, R G=6
- 10 53 ns
- 11 17
- 42 63
- 33 50
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
Q oss
V DD=-24 V, I D=9.1 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
-
-
-
-
-
-
-
-4.8 -6.4 nC
-2.6 -3.5
-14
-16 -24
-40 -54
-2.7 - V
-14 -19
IS
I S,pulse
V SD
T A=25 °C
V GS=0 V, I F=-9.1 A,
T j=25 °C
t rr
V R=15 V, I F=-9.1 A,
di F/dt =100 A/µs
Q rr
- - -2.1 A
- - -36.5
- -0.88 -1.2 V
- 19 24 ns
- 9 11 nC
2) See figure 3
3) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2010-02-15



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