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Power-Transistor. SPD30N03S2L-10G Datasheet

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Power-Transistor. SPD30N03S2L-10G Datasheet






SPD30N03S2L-10G Power-Transistor. Datasheet pdf. Equivalent




SPD30N03S2L-10G Power-Transistor. Datasheet pdf. Equivalent





Part

SPD30N03S2L-10G

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Feature • N -Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) produ ct (FOM) • Superior thermal resistanc e • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-f ree lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 M arking 2N03L10 Maximum Ratings, at Tj .
Manufacture

Infineon Technologies

Datasheet
Download SPD30N03S2L-10G Datasheet


Infineon Technologies SPD30N03S2L-10G

SPD30N03S2L-10G; = 25 °C, unless otherwise specified Pa rameter Symbol Continuous drain curre nt1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single puls e ID=30 A , VDD=25V, RGS=25Ω Repetiti ve avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=24V, d i/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Ope rating and storage tempera.


Infineon Technologies SPD30N03S2L-10G

ture IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , T stg SPD30N03S2L-10 G Product Summary VDS 30 V RDS(on) 10 mΩ ID 30 A P G-TO252-3 Value 30 30 120 150 10 6 ±2 0 100 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 02-09-2008 The rmal Characteristics Parameter Characte ristics Thermal resistance, junction - case Thermal resistance.


Infineon Technologies SPD30N03S2L-10G

, junction - ambient, leaded SMD version , device on PCB: @ min. footprint @ 6 c m2 cooling area 3) SPD30N03S2L-10 G S ymbol Values Unit min. typ. max. Rt hJC RthJA RthJA - 1 1.5 K/W - - 100 - - 75 - - 50 Electrical Characteristics , at Tj = 25 °C, unless otherwise spec ified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source brea.

Part

SPD30N03S2L-10G

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Feature • N -Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) produ ct (FOM) • Superior thermal resistanc e • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-f ree lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 M arking 2N03L10 Maximum Ratings, at Tj .
Manufacture

Infineon Technologies

Datasheet
Download SPD30N03S2L-10G Datasheet




 SPD30N03S2L-10G
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
° Pb-free lead plating; RoHS compliant
Type
Package
SPD30N03S2L-10G PG-TO252-3
Marking
2N03L10
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
SPD30N03S2L-10 G
Product Summary
VDS 30 V
RDS(on)
10 m
ID 30 A
PG-TO252-3
Value
30
30
120
150
10
6
±20
100
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
02-09-2008




 SPD30N03S2L-10G
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPD30N03S2L-10 G
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 1 1.5 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 30
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
VGS(th) 1.2 1.6
2
ID=50µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
IDSS
IGSS
µA
- 0.01 1
- 10 100
- 1 100 nA
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on)
- 11.2 14.6
VGS=4.5V, ID=30A
Drain-source on-state resistance
RDS(on) - 7.8 10 m
VGS=10V, ID=30
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
02-09-2008




 SPD30N03S2L-10G
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
SPD30N03S2L-10 G
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS2*ID *RDS(on)max,
ID =30A
VGS=0V, VDS =25V,
f=1MHz
23.8
-
-
-
VDD =15V, VGS =10V,
ID =30A,
RG=5.4
-
-
-
-
47.5
1160
450
120
6.1
13
27
17
-S
1550 pF
600
175
9.2 ns
20
41
26
Qgs VDD =24V, ID =30A
Qgd
Qg VDD =24V, ID =30A,
VGS=0 to 10V
V(plateau) VDD =24V, ID =30A
- 3.7 4.9 nC
- 10.9 16.3
- 31.4 41.8
- 3.4 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=30A
VR=-V, IF=lS,
diF/dt=100A/µs
- - 30 A
- - 120
- 0.9 1.2 V
- 31 39 ns
- 29 37 nC
Page 3
02-09-2008



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