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Power-Transistor. IPB80N04S3-06 Datasheet

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Power-Transistor. IPB80N04S3-06 Datasheet






IPB80N04S3-06 Power-Transistor. Datasheet pdf. Equivalent




IPB80N04S3-06 Power-Transistor. Datasheet pdf. Equivalent





Part

IPB80N04S3-06

Description

Power-Transistor



Feature


OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode • Auto motive AEC Q101 qualified • MSL1 up t o 260°C peak reflow • 175°C operati ng temperature • Green package (RoHS compliant) • 100% Avalanche tested I PB80N04S3-06 IPI80N04S3-06, IPP80N04S3- 06 Product Summary V DS R DS(on),max ( SMD version) ID 40 V 5.4 mΩ 80 A PG -TO263-3-2 PG-TO262-3-1 PG-TO220-3-.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S3-06 Datasheet


Infineon Technologies IPB80N04S3-06

IPB80N04S3-06; 1 Type IPB80N04S3-06 IPI80N04S3-06 IPP8 0N04S3-06 Package PG-TO263-3-2 PG-TO26 2-3-1 PG-TO220-3-1 Marking 3N0406 3N04 06 3N0406 Maximum ratings, at T j=25 C, unless otherwise specified Paramet er Symbol Conditions Continuous drai n current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain c urrent2) I D,pulse T C=25 °C Avalanc he energy, single puls.


Infineon Technologies IPB80N04S3-06

e E AS I D=80 A Gate source voltage V GS Power dissipation P tot T C=25 ° C Operating and storage temperature T j, T stg IEC climatic category; DIN IE C 68-1 Value 80 71 320 125 ±20 100 -5 5 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.1 page 1 2007-05-03 IPB80N0 4S3-06 IPI80N04S3-06, IPP80N04S3-06 Pa rameter Symbol Conditions min. Valu es typ. Unit max. T.


Infineon Technologies IPB80N04S3-06

hermal characteristics2) Thermal resist ance, junction - case R thJC Thermal r esistance, junction ambient, leaded R thJA - - 1.5 K/W - - 62 SMD version, device on PCB R thJA minimal footprin t 6 cm2 cooling area3) - - 62 - 40 E lectrical characteristics, at T j=25 ° C, unless otherwise specified Static c haracteristics Drain-source breakdown voltage V (BR)DSS .

Part

IPB80N04S3-06

Description

Power-Transistor



Feature


OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode • Auto motive AEC Q101 qualified • MSL1 up t o 260°C peak reflow • 175°C operati ng temperature • Green package (RoHS compliant) • 100% Avalanche tested I PB80N04S3-06 IPI80N04S3-06, IPP80N04S3- 06 Product Summary V DS R DS(on),max ( SMD version) ID 40 V 5.4 mΩ 80 A PG -TO263-3-2 PG-TO262-3-1 PG-TO220-3-.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S3-06 Datasheet




 IPB80N04S3-06
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB80N04S3-06
IPI80N04S3-06, IPP80N04S3-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
5.4 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N04S3-06
IPI80N04S3-06
IPP80N04S3-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0406
3N0406
3N0406
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
71
320
125
±20
100
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2007-05-03




 IPB80N04S3-06
IPB80N04S3-06
IPI80N04S3-06, IPP80N04S3-06
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=52 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A
-
-
-
- 100
- 100 nA
4.6 5.7 m
V GS=10 V, I D=80 A,
SMD version
-
4.3 5.4
Rev. 1.1
page 2
2007-05-03




 IPB80N04S3-06
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB80N04S3-06
IPI80N04S3-06, IPP80N04S3-06
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=6
-
-
-
-
-
-
-
2500
660
100
15
10
20
10
3250 pF
860
130
- ns
-
-
-
Q gs - 15 20 nC
Q gd V DD=32 V, I D=80 A,
Q g V GS=0 to 10 V
-
-
9 16
36 47
V plateau
- 6.0 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 320
- 1 1.3 V
- 34 - ns
Reverse recovery charge2)
Q rr
- 36 - nC
1) Current is limited by bondwire; with an R thJC = 1.5K/W the chip is able to carry 100A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-05-03



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