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voltage suppressor. PTVS12VZ1USKN Datasheet

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voltage suppressor. PTVS12VZ1USKN Datasheet






PTVS12VZ1USKN suppressor. Datasheet pdf. Equivalent




PTVS12VZ1USKN suppressor. Datasheet pdf. Equivalent





Part

PTVS12VZ1USKN

Description

Transient voltage suppressor



Feature


PTVS12VZ1USKN Transient voltage suppres sor in DSN1608-2 for mobile applicatio ns 22 October 2015 Preliminary data s heet 1. General description Unidirecti onal Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 ( SOD963) package, designed for transient overvoltage protection. 2. Features a nd benefits • Rated peak pulse curren t: IPPM = 59 A (8/20.
Manufacture

NXP

Datasheet
Download PTVS12VZ1USKN Datasheet


NXP PTVS12VZ1USKN

PTVS12VZ1USKN; µs pulse) • Rated peak pulse power: PPPM = 2100 W (8/20 µs pulse) • Dyna mic resistance Rdyn = 0.1 Ω • Rever se current: IRM = 1 nA • Very low pac kage height: 0.25 mm 3. Applications Power supply protection • Industri al application • Power management 4. Quick reference data Table 1. Symbol IPPM Quick reference data Parameter pe ak pulse current VRWM reverse stan.


NXP PTVS12VZ1USKN

doff voltage Conditions tp = 8/20 µs t p = 10/1000 μs Tamb = 25 °C Min Typ Max Unit [1][2] - - 59 A [3][2] - - 10. 1 A - - 12 V [1] In accordance with IE C 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). [2] Measured from p in 1 to pin 2. [3] In accordance with I EC 61643-321 (10/1000 µs current wavef orm). Scan or click this QR code to vi ew the latest informati.


NXP PTVS12VZ1USKN

on for this product NXP Semiconductors PTVS12VZ1USKN Transient voltage suppre ssor in DSN1608-2 for mobile applicatio ns 5. Pinning information Table 2. Pin ning information Pin Symbol Description 1 K cathode 2 A anode Simplified outl ine 12 Transparent top view DSN1608-2 ( SOD963) Graphic symbol 1 2 sym035 6 . Ordering information Table 3. Orderi ng information Ty.

Part

PTVS12VZ1USKN

Description

Transient voltage suppressor



Feature


PTVS12VZ1USKN Transient voltage suppres sor in DSN1608-2 for mobile applicatio ns 22 October 2015 Preliminary data s heet 1. General description Unidirecti onal Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 ( SOD963) package, designed for transient overvoltage protection. 2. Features a nd benefits • Rated peak pulse curren t: IPPM = 59 A (8/20.
Manufacture

NXP

Datasheet
Download PTVS12VZ1USKN Datasheet




 PTVS12VZ1USKN
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile
applications
22 October 2015
Preliminary data sheet
1. General description
Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2
(SOD963) package, designed for transient overvoltage protection.
2. Features and benefits
Rated peak pulse current: IPPM = 59 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 2100 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.1 Ω
Reverse current: IRM = 1 nA
Very low package height: 0.25 mm
3. Applications
Power supply protection
Industrial application
Power management
4. Quick reference data
Table 1.
Symbol
IPPM
Quick reference data
Parameter
peak pulse current
VRWM
reverse standoff
voltage
Conditions
tp = 8/20 µs
tp = 10/1000 μs
Tamb = 25 °C
Min Typ Max Unit
[1][2] - - 59 A
[3][2] - - 10.1 A
- - 12 V
[1] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
[2] Measured from pin 1 to pin 2.
[3] In accordance with IEC 61643-321 (10/1000 µs current waveform).
Scan or click this QR code to view the latest information for this product




 PTVS12VZ1USKN
NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K cathode
2 A anode
Simplified outline
12
Transparent top view
DSN1608-2 (SOD963)
Graphic symbol
1
2
sym035
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PTVS12VZ1USKN
DSN1608-2
Description
Version
leadless ultra small package; 2 terminals; body 1.6 x 0.8 SOD963
x 0.25 mm
7. Marking
Table 4. Marking codes
Type number
PTVS12VZ1USKN
Marking code
Z5
PTVS12VZ1USKN
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13




 PTVS12VZ1USKN
NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
PPPM
peak pulse power
tp = 8/20 µs
tp = 10/1000 μs
IPPM peak pulse current
tp = 8/20 µs
tp = 10/1000 μs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1][2]
[3][2]
[1][2]
[3][2]
Min
-
-
-
-
-
-40
-65
Max Unit
2100 W
180 W
59 A
10.1 A
150 °C
125 °C
150 °C
[4][2]
[4][2]
-
-
30 kV
30 kV
120
IPP
(%)
80
[1] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
[2] Measured from pin 1 to pin 2.
[3] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[4] Device stressed with ten non-repetitive ESD pulses.
100 % IPP; 8 µs
001aaa630
IPP
100 %
90 %
001aaa631
e- t
50 % IPP; 20 µs
40
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
t
PTVS12VZ1USKN
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13



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