DatasheetsPDF.com

Power-Transistor. BSC020N03LSG Datasheet

DatasheetsPDF.com

Power-Transistor. BSC020N03LSG Datasheet






BSC020N03LSG Power-Transistor. Datasheet pdf. Equivalent




BSC020N03LSG Power-Transistor. Datasheet pdf. Equivalent





Part

BSC020N03LSG

Description

Power-Transistor



Feature


OptiMOS™3 Power-MOSFET Features • Fa st switching MOSFET for SMPS • Optimi zed technology for DC/DC converters • Qualified according to JEDEC1) for tar get applications • N-channel; Logic l evel • Excellent gate charge x R DS(o n) product (FOM) • Very low on-resist ance R DS(on) • Superior thermal resi stance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free.
Manufacture

Infineon Technologies

Datasheet
Download BSC020N03LSG Datasheet


Infineon Technologies BSC020N03LSG

BSC020N03LSG; according to IEC61249-2-21 BSC020N03LS G Product Summary V DS R DS(on),max I D 30 V 2 mΩ 100 A PG-TDSON-8 Type BSC020N03LS G Package PG-TDSON-8 Mark ing 020N03LS Maximum ratings, at T j=2 5 °C, unless otherwise specified Para meter Symbol Conditions Continuous dr ain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain cu rrent3) Avalanche curre.


Infineon Technologies BSC020N03LSG

nt, single pulse4) Avalanche energy, sin gle pulse Reverse diode dv /dt Gate sou rce voltage 1) J-STD20 and JESD22 Rev. 1.27 V GS=4.5 V, T C=25 °C V GS=4.5 V , T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C page 1 Value 100 100 100 93 28 4.


Infineon Technologies BSC020N03LSG

00 50 180 6 ±20 Unit A mJ kV/µs V 200 9-10-22 Maximum ratings, at T j=25 °C , unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=5 0 K/W2) Operating and storage temperat ure T j, T stg IEC climatic category; DIN IEC 68-1 BSC020N03LS G Value 96 2 .5 -55 ... 150 55/150/56 Unit W °C P arameter Symbol Conditi.

Part

BSC020N03LSG

Description

Power-Transistor



Feature


OptiMOS™3 Power-MOSFET Features • Fa st switching MOSFET for SMPS • Optimi zed technology for DC/DC converters • Qualified according to JEDEC1) for tar get applications • N-channel; Logic l evel • Excellent gate charge x R DS(o n) product (FOM) • Very low on-resist ance R DS(on) • Superior thermal resi stance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free.
Manufacture

Infineon Technologies

Datasheet
Download BSC020N03LSG Datasheet




 BSC020N03LSG
OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC020N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
2 m
100 A
PG-TDSON-8
Type
BSC020N03LS G
Package
PG-TDSON-8
Marking
020N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.27
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
page 1
Value
100
100
100
93
28
400
50
180
6
±20
Unit
A
mJ
kV/µs
V
2009-10-22




 BSC020N03LSG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC020N03LS G
Value
96
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom
top
6 cm2 cooling area2)
-
-
-
- 1.3 K/W
- 18
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
2.3 2.9 m
V GS=10 V, I D=30 A
- 1.7 2
Gate resistance
RG
0.9 1.9 3.3
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
65
130
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 1.27
page 2
2009-10-22




 BSC020N03LSG
Parameter
Symbol Conditions
BSC020N03LS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 1.27
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5400
1900
110
11
7.0
42
7.0
7200 pF
2500
-
- ns
-
-
-
15 20 nC
9 12
7 12
14 21
34 45
2.8 - V
70 93
29 39 nC
49 66
- 87 A
- 400
0.8 1.1 V
- 25 nC
2009-10-22



Recommended third-party BSC020N03LSG Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)