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Power-Transistor. IPP084N06L3G Datasheet

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Power-Transistor. IPP084N06L3G Datasheet






IPP084N06L3G Power-Transistor. Datasheet pdf. Equivalent




IPP084N06L3G Power-Transistor. Datasheet pdf. Equivalent





Part

IPP084N06L3G

Description

Power-Transistor



Feature


Type OptiMOS™3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) N-channel, logic level • 100% avala nche tested • Pb-free plating; RoHS c ompliant • Qualified according to JED EC1) for target applications • Haloge n-free according to IEC61249-2-21 I.
Manufacture

Infineon Technologies

Datasheet
Download IPP084N06L3G Datasheet


Infineon Technologies IPP084N06L3G

IPP084N06L3G; PB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06 L3 G IPP084N06L3 G IPI084N06L3 G Pac kage Marking PG-TO263-3 081N06L PG-TO 220-3 084N06L PG-TO262-3 084N06L Maxi mum ratings, at T j=25 °C, unless othe rwise specified Parameter Symbol Cond itions Value Continuous drain current Pulsed drain curren.


Infineon Technologies IPP084N06L3G

t3) Avalanche energy, single pulse4) Gat e source voltage Power dissipation Oper ating and storage temperature I D T C= 25 °C2) T C=100 °C I D,pulse T C=25 C E AS I D=50 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg 1)J-STD20 and J ESD22 .


Infineon Technologies IPP084N06L3G

.

Part

IPP084N06L3G

Description

Power-Transistor



Feature


Type OptiMOS™3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) N-channel, logic level • 100% avala nche tested • Pb-free plating; RoHS c ompliant • Qualified according to JED EC1) for target applications • Haloge n-free according to IEC61249-2-21 I.
Manufacture

Infineon Technologies

Datasheet
Download IPP084N06L3G Datasheet




 IPP084N06L3G
Type
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Product Summary
VDS
RDS(on),max (SMD)
ID
60 V
8.1 mΩ
50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package
Marking
PG-TO263-3
081N06L
PG-TO220-3
084N06L
PG-TO262-3
084N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C2)
T C=100 °C
I D,pulse T C=25 °C
E AS I D=50 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
50
50
200
43
±20
79
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.24
page 1
2012-11-28




 IPP084N06L3G
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area5)
-
-
-
- 1.9 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=34 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A
V GS=4.5 V, I D=25 A
60
1.2
-
-
-
-
-
- -V
1.7 2.2
0.1 1 µA
10 100
1 100 nA
7.0 8.4 mΩ
9.7 14.3
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A,
(SMD)
-
6.7 8.1
Gate resistance
Transconductance
V GS=4.5 V, I D=25 A,
(SMD)
-
9.4 14
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
35
0.9
69
-Ω
-S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.24
page 2
2012-11-28




 IPP084N06L3G
Parameter
Symbol Conditions
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=20 A, R G=1.6 Ω
-
-
-
-
-
-
-
3700
690
31
15
26
37
7
4900 pF
920
-
- ns
-
-
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 14 - nC
Q gd
Q sw
V DD=30 V, I D=50 A,
V GS=0 to 4.5 V
Qg
-
-
-
5-
12 -
22 29
V plateau
- 3.8 - V
Q oss
V DD=30 V, V GS=0 V
-
34 45 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
t rr V R=30 V, I F=20A,
Q rr di F/dt =100 A/µs
6) See figure 16 for gate charge parameter definition
- - 50 A
- - 200
- 1.0 1.2 V
- 40 - ns
- 39 - nC
Rev. 2.24
page 3
2012-11-28



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