DatasheetsPDF.com

Power-Transistor. IPD90N06S4-05 Datasheet

DatasheetsPDF.com

Power-Transistor. IPD90N06S4-05 Datasheet






IPD90N06S4-05 Power-Transistor. Datasheet pdf. Equivalent




IPD90N06S4-05 Power-Transistor. Datasheet pdf. Equivalent





Part

IPD90N06S4-05

Description

Power-Transistor



Feature


OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Lo w RDSon IPD90N06S4-05 Product Summary V DS R DS(on),max ID 60 V 5.1 mΩ 90 A PG-TO252-3-11 Type IPD90N04S6-05 Package Marking PG-TO252-3-11 4N060.
Manufacture

Infineon Technologies

Datasheet
Download IPD90N06S4-05 Datasheet


Infineon Technologies IPD90N06S4-05

IPD90N06S4-05; 5 Maximum ratings, at T j=25 °C, unles s otherwise specified Parameter Symbo l Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C , V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, s ingle pulse2) E AS I D=45A Avalanche c urrent, single pulse I AS - Gate sourc e voltage V GS - Power dissipation P tot T C=25°C Operat.


Infineon Technologies IPD90N06S4-05

ing and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 77 360 135 90 ±20 107 -5 5 ... +175 55/175/56 Unit A mJ A V W C − Rev. 1.0 page 1 2009-03-24 I PD90N06S4-05 Parameter Symbol Condit ions Thermal characteristics2) Therma l resistance, junction - case SMD versi on, device on PCB R thJC R thJA minim al footprint 6 cm2 coo.


Infineon Technologies IPD90N06S4-05

ling area3) min. Values typ. Unit max . - - 1.4 K/W - - 62 - - 40 Electrica l characteristics, at T j=25 °C, unles s otherwise specified Static character istics Drain-source breakdown voltage G ate threshold voltage Zero gate voltage drain current Gate-source leakage curr ent Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V D S=V GS, I D=60µA I.

Part

IPD90N06S4-05

Description

Power-Transistor



Feature


OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Lo w RDSon IPD90N06S4-05 Product Summary V DS R DS(on),max ID 60 V 5.1 mΩ 90 A PG-TO252-3-11 Type IPD90N04S6-05 Package Marking PG-TO252-3-11 4N060.
Manufacture

Infineon Technologies

Datasheet
Download IPD90N06S4-05 Datasheet




 IPD90N06S4-05
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra Low RDSon
IPD90N06S4-05
Product Summary
V DS
R DS(on),max
ID
60 V
5.1 m
90 A
PG-TO252-3-11
Type
IPD90N04S6-05
Package
Marking
PG-TO252-3-11 4N0605
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
77
360
135
90
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24




 IPD90N06S4-05
IPD90N06S4-05
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.4 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=60µA
I DSS
V DS=60V, V GS=0V,
T j=25°C
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=90A
60 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA
- 4.2 5.1 m
Rev. 1.0
page 2
2009-03-24




 IPD90N06S4-05
IPD90N06S4-05
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0V, V DS=25V,
f =1MHz
V DD=30V, V GS=10V,
I D=90A, R G=3.5
Q gs
Q gd
Qg
V plateau
V DD=48V, I D=90A,
V GS=0 to 10V
IS
I S,pulse
V SD
T C=25°C
V GS=0V, I F=90A,
T j=25°C
t rr
V R=30V, I F=90A,
di F/dt =100A/µs
min.
Values
typ.
Unit
max.
- 5000 6500 pF
- 1230 1600
- 50 100
- 20 - ns
-5-
- 35 -
-8-
- 28 36 nC
- 7 14
- 62 81
- 5.6 - V
- - 90 A
- - 360
0.6 0.95 1.3 V
- 36 - ns
Reverse recovery charge2)
Q rr
- 41 - nC
1) Current is limited by bondwire; with an R thJC = 1.4K/W the chip is able to carry A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24



Recommended third-party IPD90N06S4-05 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)