OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product...
OptiMOS® Power-
Transistor
Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated ° Pb-f.ree lead plating; RoHS compliant
SPD30N03S2L-07 G
Product Summary
VDS 30 V
RDS(on) 6.7
ID 30
PG-TO252-3
mΩ A
Type
Package
Marking
SPD30N03S2L-07G PG-TO252-3
2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR dv/dt
VGS Ptot
Tj , Tstg
Value
30 30 120
250
13 6
±20 136
-55... +175 55/175/56
Unit A
mJ
kV/µs V W °C
Page 1
02-09-2008
SPD30N03S2L-07 G
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 0.7 1.1 K/W - - 100
- - 75 - - 50
Electr. ical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshol...