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Power-Transistor. SPD30N03S2L-07G Datasheet

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Power-Transistor. SPD30N03S2L-07G Datasheet






SPD30N03S2L-07G Power-Transistor. Datasheet pdf. Equivalent




SPD30N03S2L-07G Power-Transistor. Datasheet pdf. Equivalent





Part

SPD30N03S2L-07G

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Feature • N -Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS( on) product (FOM) • Superior thermal resistance • 175°C operating tempera ture • Avalanche rated • dv/dt rate d ° Pb-f.ree lead plating; RoHS compli ant SPD30N03S2L-07 G Product Summary VDS 30 V RDS(on) 6.7 ID 30 PG-TO252-3 mΩ A Type Package Marking SPD30.
Manufacture

Infineon Technologies

Datasheet
Download SPD30N03S2L-07G Datasheet


Infineon Technologies SPD30N03S2L-07G

SPD30N03S2L-07G; N03S2L-07G PG-TO252-3 2N03L07 Maximum Ratings, at Tj = 25 °C, unless otherwi se specified Parameter Symbol Contin uous drain current1) ID TC=25°C Pul sed drain current TC=25°C Avalanche en ergy, single pulse ID=30 A , VDD=25V, R GS=25Ω Repetitive avalanche energy, l imited by Tjmax2) Reverse diode dv/dt I S=30A, VDS=24V, di/dt=200A/µs, Tjmax=1 75°C Gate source voltage.


Infineon Technologies SPD30N03S2L-07G

Power dissipation TC=25°C Operating an d storage temperature IEC climatic cate gory; DIN IEC 68-1 ID puls EAS EAR dv/ dt VGS Ptot Tj , Tstg Value 30 30 120 250 13 6 ±20 136 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 02- 09-2008 SPD30N03S2L-07 G Thermal Char acteristics Parameter Characteristics T hermal resistance, junction - case Ther mal resistance, juncti.


Infineon Technologies SPD30N03S2L-07G

on - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooli ng area 3) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 0.7 1.1 K/W - - 100 - - 75 - - 50 Electr. ica l Characteristics, at Tj = 25 °C, unle ss otherwise specified Parameter Symb ol Values Unit min. typ. max. Stati c Characteristics Drain-source breakdo wn voltage VGS=0V, .

Part

SPD30N03S2L-07G

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Feature • N -Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS( on) product (FOM) • Superior thermal resistance • 175°C operating tempera ture • Avalanche rated • dv/dt rate d ° Pb-f.ree lead plating; RoHS compli ant SPD30N03S2L-07 G Product Summary VDS 30 V RDS(on) 6.7 ID 30 PG-TO252-3 mΩ A Type Package Marking SPD30.
Manufacture

Infineon Technologies

Datasheet
Download SPD30N03S2L-07G Datasheet




 SPD30N03S2L-07G
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
° Pb-f.ree lead plating; RoHS compliant
SPD30N03S2L-07 G
Product Summary
VDS 30 V
RDS(on) 6.7
ID 30
PG-TO252-3
m
A
Type
Package
Marking
SPD30N03S2L-07G PG-TO252-3
2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
30
120
250
13
6
±20
136
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
02-09-2008




 SPD30N03S2L-07G
SPD30N03S2L-07 G
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 0.7 1.1 K/W
- - 100
- - 75
- - 50
Electr. ical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
V(BR)DSS 30
-
VGS(th) 1.2 1.6
-V
2
ID=85µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
IDSS
IGSS
µA
- 0.01 1
- 10 100
- 1 100 nA
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on) - 7.4 9.8 m
VGS=4.5V, ID=30A
Drain-source on-state resistance
RDS(on) - 5.3 6.7
VGS=10V, ID=30A
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
02-09-2008




 SPD30N03S2L-07G
SPD30N03S2L-07 G
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate r.esistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
RG
td(on)
tr
td(off)
tf
VDS2*ID *RDS(on)max,
ID =30A
VGS=0V, VDS =25V,
f=1MHz
VDD =15V, VGS =10V,
ID =15A,
RG=3.6
29
-
-
-
-
-
-
-
-
58 - S
1900 2530 pF
740 990
180 270
2.3 -
8 10 ns
17 26
62 77.5
47 59
Qgs VDD =24V, ID =30A
Qgd
Qg VDD =24V, ID =30A,
VGS=0 to 10V
V(plateau) VDD =24V, ID =30A
- 6 8 nC
- 18 27
- 51 68
- 3.1 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=30A
VR=15V, I F=lS,
diF/dt=100A/µs
- - 30 A
- - 120
- 0.9 1.3 V
- 41 51 ns
- 46 58 nC
Page 3
02-09-2008



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