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Power-Transistor. BSO080P03SH Datasheet

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Power-Transistor. BSO080P03SH Datasheet






BSO080P03SH Power-Transistor. Datasheet pdf. Equivalent




BSO080P03SH Power-Transistor. Datasheet pdf. Equivalent





Part

BSO080P03SH

Description

Power-Transistor



Feature


OptiMOS™-P Power-Transistor Features P-Channel • Enhancement mode • L ogic level • 150°C operating tempera ture • Qualified according JEDEC for target applications • Pb-free lead pl ating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Sum mary V DS R DS(on),max ID BSO080P03S H -30 V 8 m: -14.9 A PG-DSO-8 Type BSO 080P03S H Package P-DSO-8 Marking.
Manufacture

Infineon Technologies

Datasheet
Download BSO080P03SH Datasheet


Infineon Technologies BSO080P03SH

BSO080P03SH; lead free 080P3S Yes Halogen free Yes packing dry Maximum ratings, at T j=2 5 °C, unless otherwise specified Para meter Symbol Conditions Continuous dr ain current Pulsed drain current ID I D,pulse T A=25 °C1) T A=70 °C1) T A= 25 °C2) Value Unit 10 secs steady s tate -14.9 -12.6 A -11.9 -10 -60 Avalanche energy, single pulse E AS I D=-14.9 A, R GS=25 : .


Infineon Technologies BSO080P03SH

248 mJ Gate source voltage Power dissip ation Operating and storage temperature ESD class V GS P tot T A=25 °C1) T j , T stg JESD22-A114 HBM Soldering temp erature IEC climatic category; DIN IEC 68-1 ±25 2.5 1.79 -55 ... 150 V W C 260 55/150/56 Rev. 1.31 page 1 2 010-02-10 Parameter Thermal characteri stics Thermal resistance, junction - so ldering point Thermal.


Infineon Technologies BSO080P03SH

resistance, junction - ambient Symbol Conditions BSO080P03S H min. Values typ. Unit max. R thJS R thJA minima l footprint, t p 10 s minimal footprint , steady state 6 cm2 cooling area1), t p 10 s 6 cm2 cooling area1), steady sta te - - 35 K/W - 110 - 150 - 50 - 70 Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Dra.

Part

BSO080P03SH

Description

Power-Transistor



Feature


OptiMOS™-P Power-Transistor Features P-Channel • Enhancement mode • L ogic level • 150°C operating tempera ture • Qualified according JEDEC for target applications • Pb-free lead pl ating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Sum mary V DS R DS(on),max ID BSO080P03S H -30 V 8 m: -14.9 A PG-DSO-8 Type BSO 080P03S H Package P-DSO-8 Marking.
Manufacture

Infineon Technologies

Datasheet
Download BSO080P03SH Datasheet




 BSO080P03SH
OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSO080P03S H
-30 V
8 m:
-14.9 A
PG-DSO-8
Type
BSO080P03S H
Package
P-DSO-8
Marking lead free
080P3S Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
10 secs steady state
-14.9
-12.6 A
-11.9
-10
-60
Avalanche energy, single pulse
E AS I D=-14.9 A, R GS=25 :
248 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V GS
P tot T A=25 °C1)
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
2.5 1.79
-55 ... 150
V
W
°C
260
55/150/56
Rev. 1.31
page 1
2010-02-10




 BSO080P03SH
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Symbol Conditions
BSO080P03S H
min.
Values
typ.
Unit
max.
R thJS
R thJA
minimal footprint,
t p 10 s
minimal footprint,
steady state
6 cm2 cooling area1),
t p 10 s
6 cm2 cooling area1),
steady state
-
-
-
-
-
- 35 K/W
- 110
- 150
- 50
- 70
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=0 V, I D=-250PA
V GS(th)
V DS=V GS,
I D=-250 μA
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
V DS=-30 V, V GS=0 V,
T j=150 °C
I GSS
V GS=-25 V, V DS=0 V
R DS(on)
V GS=-10 V,
I D=-14.9 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=-14.9 A
-30
-1
-
-
-
-
22
- -V
-1.5 -2.2
-0.1 -1 μA
-10 -100
- -100 nA
6.7 8.0
43 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.31
page 2
2010-02-10




 BSO080P03SH
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSO080P03S H
min.
Values
typ.
Unit
max.
C iss - 4430 5890 pF
C oss
V GS=0 V,
V DS=-25 V, f =1 MHz
-
1180 1570
C rss - 970 1500
t d(on)
tr
t d(off)
tf
V DD=-15 V,
V GS=-10 V,
I D=-1 A, R G=6 :
- 15 23 ns
- 22 33
- 130 195
- 110 165
Q gs - -11 -15 nC
Q g(th)
Q gd
Q sw
Qg
V DD=-24 V,
I D=-14.9 A,
V GS=0 to -10 V
- -7.1 -9.5
- -35
- -40 -59
- -102 -136
V plateau
- -2.5 - V
Q oss
V DD=-15 V, V GS=0 V
-
-36 -48
IS
I S,pulse
T A=25 °C
- - -2.1 A
- - -60
V SD
V GS=0 V, I F=-14.9 A,
T j=25 °C
-
-0.82 -1.2 V
t rr
V R=15 V, I F=-14.9A,
di F/dt =100 A/μs
-
32 40 ns
Q rr - -20 -25 nC
2) See figure 3
3) See figure 16 for gate charge parameter definition
Rev. 1.31
page 3
2010-02-10



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