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Power Transistors. D1505 Datasheet

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Power Transistors. D1505 Datasheet






D1505 Transistors. Datasheet pdf. Equivalent




D1505 Transistors. Datasheet pdf. Equivalent





Part

D1505

Description

Silicon NPN Power Transistors



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 1505 DESCRIPTION www.dat·aWshiethet4T uO.co-2m20 package ·Complement to type 2SB1064 ·Low collector saturation vol tage APPLICATIONS ·Designed for use i n low frequency power amplifier applica tions PINNING PIN 1 2 3 DESCRIPTION B ase Collector;connected to mounting bas e Emitter Absolute ma.
Manufacture

SavantIC

Datasheet
Download D1505 Datasheet


SavantIC D1505

D1505; ximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage Collector-emitte r voltage Emitter-base voltage Collecto r current Collector current-peak Base c urrent Collector power dissipation Junc tion temperature Storage temperature C ONDITIONS Open emitter Open base Open c ollector TC=25 VALUE 60 50 5 3 4.5 0.5 30 150 -55~150 U.


SavantIC D1505

NIT V V V A A A W SavantIC Semiconducto r Silicon NPN Power Transistors Produc t Specification 2SD1505 CHARACTERISTIC S Tj=25 unless otherwise specified www .datasheet4u.com SYMBOL PARAMETER CO NDITIONS V(BR)CEO Collector-emitter br eakdown voltage IC=1mA ,IB=0 V(BR)CBO Collector-base breakdown voltage IC=50 µA ,IE=0 V(BR)EBO Emitter-base breakd own voltage IE=50µ.


SavantIC D1505

A ,IC=0 VCEsat Collector-emitter satura tion voltage IC=2A; IB=0.2A VBEsat Ba se-emitter saturation voltage IC=2A; I B=0.2A ICBO Collector cut-off current VCB=40V; IE=0 IEBO Emitter cut-off cu rrent VEB=4V; IC=0 hFE DC current gai n IC=0.5A ; VCE=3V COB Output capacit ance IE=0 ; VCB=10V,f=1MHz fT Transit ion frequency IC=0.5A ; VCE=5V MIN TY P. MAX UNIT 50 V 6.

Part

D1505

Description

Silicon NPN Power Transistors



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 1505 DESCRIPTION www.dat·aWshiethet4T uO.co-2m20 package ·Complement to type 2SB1064 ·Low collector saturation vol tage APPLICATIONS ·Designed for use i n low frequency power amplifier applica tions PINNING PIN 1 2 3 DESCRIPTION B ase Collector;connected to mounting bas e Emitter Absolute ma.
Manufacture

SavantIC

Datasheet
Download D1505 Datasheet




 D1505
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1505
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·Complement to type 2SB1064
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
5
3
4.5
0.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W




 D1505
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1505
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO Collector cut-off current
VCB=40V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.5A ; VCE=3V
COB Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
50 V
60 V
5V
1.0 V
1.5 V
1.0 µA
1.0 µA
60 320
40 pF
90 MHz
2




 D1505
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1505
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3



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