Document
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1505
DESCRIPTION www.dat·aWshiethet4TuO.co-2m20 package
·Complement to type 2SB1064
·Low collector saturation voltage
APPLICATIONS ·Designed for use in low frequency
power amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC ICM IB PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 60 50 5 3 4.5 0.5 30 150
-55~150
UNIT V V V A A A W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1505
CHARACTERISTICS
Tj=25 unless otherwise specified www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO Collector cut-off current
VCB=40V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.5A ; VCE=3V
COB Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT 50 V 60 V 5V
1.0 V 1.5 V 1.0 µA 1.0 µA 60 320 40 pF 90 MHz
2
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE www.datasheet4u.com
Product Specification
2SD1505
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3
.