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2SA1742. A1742 Datasheet

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2SA1742. A1742 Datasheet






A1742 2SA1742. Datasheet pdf. Equivalent




A1742 2SA1742. Datasheet pdf. Equivalent





Part

A1742

Description

2SA1742



Feature


DATA SHEET SILICON POWER TRANSISTOR 2SA1 742 PNP SILICON EPITAXIAL TRANSISTOR FO R HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-s peed switching and features a high hFE at low VCE(sat). This transistor is ide al for use as a driver in DC/DC convert ers and actuators. In addition, a small resin-molded insulation type package c ontributes to high.
Manufacture

NEC

Datasheet
Download A1742 Datasheet


NEC A1742

A1742; -density mounting and reduction of mount ing cost. FEATURES • High hFE and lo w VCE(sat): hFE ≥ 100 MIN. @VCE = − 2.0 V, IC = −1.5 A VCE(sat) ≥ −0. 3 V MAX. @IC = −4.0 V, IB = −0.2 A • Full-mold package that does not req uire an insulating board or bushing AB SOLUTE MAXIMUM RATINGS (TA = 25°C) Pa rameter Collector to base voltage Colle ctor to emitter voltage Emitter to ba.


NEC A1742

se voltage Collector current (DC) Collec tor current (pulse) Base current (DC) T otal power dissipation Junction tempera ture Storage temperature Symbol VCBO V CEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty c ycle ≤ 10% TC = 25°C TA = 25°C Rat ings −100 Unit http://www.DataSheet4 U.net/ V −60 V −7.0 V −7.0 A −14 A −3.5 30 2.0 150 −55 to +15.


NEC A1742

0 A W W °C °C ORDERING INFORMATION Part No. 2SA1742 Package Isolated TO-2 20 (Isolated TO-220) The information in this document is subject to change w ithout notice. Before using this docume nt, please confirm that this is the lat est version. Not all devices/types avai lable in every country. Please check wi th local NEC representative for availab ility and additional.

Part

A1742

Description

2SA1742



Feature


DATA SHEET SILICON POWER TRANSISTOR 2SA1 742 PNP SILICON EPITAXIAL TRANSISTOR FO R HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-s peed switching and features a high hFE at low VCE(sat). This transistor is ide al for use as a driver in DC/DC convert ers and actuators. In addition, a small resin-molded insulation type package c ontributes to high.
Manufacture

NEC

Datasheet
Download A1742 Datasheet




 A1742
DATA SHEET
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1742 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low VCE(sat):
hFE 100 MIN. @VCE = 2.0 V, IC = 1.5 A
VCE(sat) ≥ −0.3 V MAX. @IC = 4.0 V, IB = 0.2 A
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW 300 µs,
duty cycle 10%
TC = 25°C
TA = 25°C
Ratings
100
Unit
http://www.DataSheet4U.net/
V
60 V
7.0 V
7.0 A
14 A
3.5
30
2.0
150
55 to +150
A
W
W
°C
°C
ORDERING INFORMATION
Part No.
2SA1742
Package
Isolated TO-220
(Isolated TO-220)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
datasheet pdf - http://www.DataSheet4U.net/




 A1742
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
VCEO(SUS)
VCEX(SUS)
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Cob
fT
ton
tstg
tf
IC = 4.0 V, IB = 0.4 A, L = 1 mH
IC = 4.0 A, IB1 = IB2 = 0.4 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
VCB = 60 V, IE = 0 A
VCE = 60 V, RBE = 50 , TA = 125°C
VCE = 60 V, VBE(OFF) = 1.5 V
VCE = 60 V, VBE(OFF) = 1.5 V,
TA = 125°C
VEB = 5.0 V, IC = 0 A
VCE = 2.0 V, IC = 0.7 ANote
VCE = 2.0 V, IC = 1.5 ANote
VCE = 2.0 V, IC = 4.0 ANote
IC = 4.0 A, IB = 0.2 ANote
IC = 6.0 A, IB = 0.3 ANote
IC = 4.0 A, IB = 0.2 ANote
IC = 6.0 A, IB = 0.3 ANote
VCB = 10 V, IE = 0 A, f = 1.0 MHz
VCB = 10 V, IC = 1.0 A
IC = 4.0 A, RL = 12.5 ,
IB1 = IB2 = 0.2 A, VCC ≅ −50 V
Refer to the test circuit.
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
http://www.DataSheet4U.net/
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SA1742
MIN.
60
60
100
100
60
TYP.
180
40
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D14858EJ2V0DS
datasheet pdf - http://www.DataSheet4U.net/




 A1742
TYPICAL CHARACTERISTICS (TA = 25°C)
2SA1742
Case Temperature TC (°C)
Case Temperature TC (°C)
http://www.DataSheet4U.net/
Single pulse
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D14858EJ2V0DS
3
datasheet pdf - http://www.DataSheet4U.net/



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