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N-Channel MOSFET. D4NK50Z Datasheet

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N-Channel MOSFET. D4NK50Z Datasheet






D4NK50Z MOSFET. Datasheet pdf. Equivalent




D4NK50Z MOSFET. Datasheet pdf. Equivalent





Part

D4NK50Z

Description

N-Channel MOSFET



Feature


STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4 NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO -220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS R DS(on) ID Pw STP4NK50Z STP4NK50ZFP S TD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.3 Ω s EXT REMELY HIGH dv/dt CAPABILITY s 1.
Manufacture

STMicroelectronics

Datasheet
Download D4NK50Z Datasheet


STMicroelectronics D4NK50Z

D4NK50Z; 00% AVALANCHE TESTED s GATE CHARGE MINIM IZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series i s obtained through an extreme optimizat ion of ST’s well established stripbas ed PowerMESH™ layout. In addition to pushing on-resistance significantly dow n, special care is taken to ensure a ve ry good dv/dt capability.


STMicroelectronics D4NK50Z

for the most demanding applications. Su ch series complements ST full range of high voltage MOSFETs including revoluti onary MDmesh™ products. TO-220 3 1 D PAK 3 2 1 TO-220FP IPAK 3 2 1 INTER NAL SCHEMATIC DIAGRAM APPLICATIONS s H IGH CURRENT, HIGH SPEED SWITCHING s IDE AL FOR OFF-LINE POWER SUPPLIES, ADAPTOR S AND PFC s LIGHTING ORDERING INFORMAT ION SALES TYPE MAR.


STMicroelectronics D4NK50Z

KING STP4NK50Z P4NK50Z STP4NK50ZFP P 4NK50ZFP STD4NK50ZT4 D4NK50Z STD4NK5 0Z-1 D4NK50Z December 2002 PACKAGE T O-220 TO-220FP DPAK IPAK PACKAGING TUB E TUBE TAPE & REEL TUBE 1/13 STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z- 1 ABSOLUTE MAXIMUM RATINGS Symbol Pa rameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 2 0 kΩ) VGS Gate- s.

Part

D4NK50Z

Description

N-Channel MOSFET



Feature


STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4 NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO -220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS R DS(on) ID Pw STP4NK50Z STP4NK50ZFP S TD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.3 Ω s EXT REMELY HIGH dv/dt CAPABILITY s 1.
Manufacture

STMicroelectronics

Datasheet
Download D4NK50Z Datasheet




 D4NK50Z
STD4NK50Z-1, STD4NK50ZT4
Datasheet
N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in
IPAK and DPAK packages
TAB
IPAK
3
12
D(2, TAB)
TAB
23
1
DPAK
Features
Order codes VDS RDS(on) max.
STD4NK50Z-1
STD4NK50ZT4
500 V
2.7 Ω
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
PTOT
45 W
Package
IPAK
DPAK
G(1) Applications
• Switching applications
S(3)
AM01475V1
Product status link
STD4NK50Z-1
STD4NK50ZT4
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2913 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com




 D4NK50Z
STD4NK50Z-1, STD4NK50ZT4
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
ESD
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 3 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Value
500
±30
3
1.9
12
45
4.5
2.8
-55 to 150
Symbol
Table 2. Thermal data
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Value
IPAK
DPAK
2.78
100
50
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
3
120
Unit
V
V
A
A
A
W
V/ns
kV
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DS2913 - Rev 3
page 2/23




 D4NK50Z
STD4NK50Z-1, STD4NK50ZT4
Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on
resistance
VGS = 0 V, VDS = 500 V
VGS = 0 V, VDS = 500 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 1.5 A
1. Defined by design, not subject to production test.
Min.
500
3
Typ.
3.75
2.2
Max.
1
50
±10
4.5
2.7
Unit
V
µA
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Coss eq. (1)
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Equivalent output capacitance VGS = 0 V, VDS = 0 V to 400 V
Total gate charge
VDD = 400 V, ID = 3 A,
Gate-source charge
VGS = 0 to 10 V
Gate-drain charge
(see Figure 14. Test circuit for
gate charge behavior)
-
-
-
310
49
10
33
12
3
7
pF
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to
80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 250 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
Min.
-
Typ.
10
7
21
11
Max.
Unit
ns
DS2913 - Rev 3
page 3/23



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