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D4NK50Z Dataheets PDF



Part Number D4NK50Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet D4NK50Z DatasheetD4NK50Z Datasheet (PDF)

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTIO.

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STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-220 3 1 DPAK 3 2 1 TO-220FP IPAK 3 2 1 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE MARKING STP4NK50Z P4NK50Z STP4NK50ZFP P4NK50ZFP STD4NK50ZT4 D4NK50Z STD4NK50Z-1 D4NK50Z December 2002 PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE 1/13 STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤3 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed STP4NK50Z 3 1.9 12 45 0.36 - Value STP4NK50ZFP 500 500 ± 30 3 (*) 1.9 (*) 12 (*) 20 0.16 2800 4.5 2500 STD4NK50Z STD4NK50Z-1 3 (*) 1.9 (*) 12 (*) 45 0.36 - -55 to 150 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case (Max) Thermal Resistance Junction-ambient (Max) Maximum Lead Temperature For Soldering Purpose TO-220 TO-220FP 2.78 6.25 62.5 300 DPAK IPAK 2.78 100 Unit V V V A A A W W/°C V V/ns V °C °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 3 120 Unit A mJ GATE-SOURCE ZENER DIODE Symbol Parameter BVGSO Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 500 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A 2.3 2.7 DYNAMIC Symbol Parameter gfs (1) Forward Transconductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss eq. (3) Equivalent Output Capacitance SWITCHING ON Symbol Parameter td(on) tr Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDS = 15 V, ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. VGS = 0V, VDS = 0V to 400V Test Conditions VDD = 250 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 400 V, ID = 3 A, VGS = 10 V Min. Typ. 1.5 310 49 10 33 Typ. 10 7 12 3 7 Max. Max. SWITCHING OFF Symbol Parameter td(off) tf Turn-off Delay Time Fall Time tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 250 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 3 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 21 11 10 10 17 Max. Unit V µA µA µA V Ω Unit S pF pF pF pF Unit ns ns nC nC nC Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Con.


A1742 D4NK50Z SP5619


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