Power-Transistor. BSC016N03LSG Datasheet

BSC016N03LSG Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies BSC016N03LSG
BSC016N03LS G
OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel
Product Summary
V DS
R DS(on),max
ID
30 V
1.6 m
100 A
PG-TDSON-8
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC016N03LS G
PG-TDSON-8 016N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
100 A
100
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
100
100
32
400
50
290 mJ
6 kV/µs
±20 V
Rev. 1.28
page 1
2009-10-22


BSC016N03LSG Datasheet
Recommendation BSC016N03LSG Datasheet
Part BSC016N03LSG
Description Power-Transistor
Feature BSC016N03LSG; BSC016N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technolo.
Manufacture Infineon Technologies
Datasheet
Download BSC016N03LSG Datasheet




Infineon Technologies BSC016N03LSG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC016N03LS G
Value
125
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom
top
6 cm2 cooling area2)
-
-
-
- 1 K/W
- 18
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
1.8 2.3 m
V GS=10 V, I D=30 A
- 1.3 1.6
Gate resistance
RG
0.7 1.5 2.6
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
65
130
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 1.28
page 2
2009-10-22



Infineon Technologies BSC016N03LSG
Parameter
Symbol Conditions
BSC016N03LS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 1.28
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7600
2600
160
13
8.6
51
8.6
10000 pF
3500
-
- ns
-
-
-
21 28 nC
12 16
10 17
19 29
47 63
2.8 - V
98 131
41 55 nC
67 90
-
-
0.78
100 A
400
1.1 V
- 30 nC
2009-10-22





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