Power-Transistor. IPI80N04S3-03 Datasheet

IPI80N04S3-03 Power-Transistor. Datasheet pdf. Equivalent

IPI80N04S3-03 Datasheet
Recommendation IPI80N04S3-03 Datasheet
Part IPI80N04S3-03
Description Power-Transistor
Feature IPI80N04S3-03; OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified .
Manufacture Infineon Technologies
Datasheet
Download IPI80N04S3-03 Datasheet




Infineon Technologies IPI80N04S3-03
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.2 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N04S3-03
IPI80N04S3-03
IPP80N04S3-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0403
3N0403
3N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
526
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03



Infineon Technologies IPI80N04S3-03
IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.8 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=120 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1 µA
Gate-source leakage current
I GSS
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
-
-
- 100
- 100 nA
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 2.8 3.5 m
V GS=10 V, I D=80 A,
SMD version
-
2.5 3.2
Rev. 1.0
page 2
2007-05-03



Infineon Technologies IPI80N04S3-03
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=3.5
-
-
-
-
-
-
-
5600
1540
240
25
17
39
14
7300 pF
2000
350
- ns
-
-
-
Q gs - 30 40 nC
Q gd V DD=32 V, I D=80 A,
Q g V GS=0 to 10 V
-
-
20 35
83 110
V plateau
- 5.4 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 320
- 1 1.3 V
- 46 - ns
Reverse recovery charge2)
Q rr
- 73 - nC
1) Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 182A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-05-03







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