BSC019N04NSG

OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 BSC019N04NS G Product Summary V DS R DS(on),max ID 40 V 1.9 mΩ 100 A PG-TDSON-8 Type BSC019N04NS G Package PG-TDSON-8 Marking 019N04NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω Value 100 100 29 400 50 295 ±20 Unit A mJ V Rev. 1.4 page 1 2009-10-22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSC019N04NS G Value 125 2.5 -55 ... 150 55/150/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA bottom top 6 cm2 cooli...