BSC017N04NS G
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC con...
BSC017N04NS G
OptiMOS™3 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel Normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant; Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
40 V 1.7 mΩ 100 A
PG-TDSON-8
Type BSC017N04NS G
Package PG-TDSON-8
Marking 017N04NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse I AS E AS V GS
T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω
30
400 50 295 mJ ±20 V
Rev. 1.24
page 1
2009-10-22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC017N04NS G
Value 139
2.5
-55 ... 150 55/150/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom top 6 cm2 ...