Power-Transistor. BSC118N10NSG Datasheet

BSC118N10NSG Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies BSC118N10NSG
BSC118N10NS G
OptiMOS™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
100 V
11.8 m
71 A
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
PG-TDSON-8
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
BSC118N10NS G
Package
PG-TDSON-8
Marking
118N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
71
44
11
280
155
±20
114
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 1.08
page 1
2009-11-03


BSC118N10NSG Datasheet
Recommendation BSC118N10NSG Datasheet
Part BSC118N10NSG
Description Power-Transistor
Feature BSC118N10NSG; BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge.
Manufacture Infineon Technologies
Datasheet
Download BSC118N10NSG Datasheet




Infineon Technologies BSC118N10NSG
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance,
junction - ambient
R thJA
bottom
top
minimal footprint
6 cm2 cooling area2)
BSC118N10NS G
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 18
- - 62
- - 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=70 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
100
2
-
-
-
-
-
33
-
3
0.01
10
1
10
0.8
65
-V
4
1 µA
100
100 nA
11.8 m
-
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 1.08
page 2
2009-11-03



Infineon Technologies BSC118N10NSG
Parameter
Symbol Conditions
BSC118N10NS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=25 A, R G=1.6
-
-
-
-
-
-
-
2800
420
26
21
21
32
8
3700 pF
560
39
32 ns
32
48
12
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 14 19 nC
Q gd - 10 15
Q sw
V DD=50 V, I D=25 A,
V GS=0 to 10 V
-
19 27
Q g - 42 56
V plateau
- 4.9 - V
Q oss
V DD=50 V, V GS=0 V
-
45 60 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=50 V, I F=25 A,
di F/dt =100 A/µs
- - 70 A
- - 280
-
0.94
1.2 V
- 81 - ns
- 188 - nC
4) See figure 16 for gate charge parameter definition
Rev. 1.08
page 3
2009-11-03







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