OptiMOS®2 Power-Transistor
Features • Very low gate charge for high frequency applications • Optimized for dc-dc convers...
OptiMOS®2 Power-
Transistor
Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
BSC152N10NSF G
Product Summary V DS R DS(on),max ID
100 V 15.2 mΩ 63 A
PG-TDSON-8
Type BSC152N10NSF G
Package PG-TDSON-8
Marking 152N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3) Avalanche energy, single pulse Gate source voltage
I D,pulse E AS V GS
T C=25 °C I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
63 40
9.4
252 155 ±20 114 -55 ... 150 55/150/56
Unit A
mJ V W °C
Rev. 2.06
page 1
2008-10-20
Parameter
Symbol Conditions
Thermal characteristics Thermal resistance, junction - case R thJC
Thermal resistance, junction - ambient
R thJA
bottom top minimal footprint 6 cm2 cooling area2)
BSC152N10NSF G
min.
Values typ.
Unit max.
- - 1.1 K/W - - 18 - - 62 - - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage ...