Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for ...
Type
OptiMOS™3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
IPB230N06L3 G IPP230N06L3 G
Product Summary VDS RDS(on),max ID
60 V 23 mW 30 A
Type
IPB230N06L3 G IPP230N06L3 G
Package Marking
PG-TO263-3 230N06L
PG-TO220-3 230N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
1)J-STD20 and JESD22
2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
30 21 120 13 ±20 36 -55 ... 175
Unit A
mJ V W °C
2012-12-19
IPB230N06L3 G IPP230N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm² cooling area4)
min.
Values typ.
Unit max.
- - 4.2 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
...