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IPD068N10N3G Dataheets PDF



Part Number IPD068N10N3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPD068N10N3G DatasheetIPD068N10N3G Datasheet (PDF)

IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD068N10N3 G 100 V 6.8 mW 90 A Package Marking PG-TO2.

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IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD068N10N3 G 100 V 6.8 mW 90 A Package Marking PG-TO252-3 068N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Value 90 72 360 130 ±20 150 -55 ... 175 55/175/56 Unit A mJ V W °C Rev. 2.2 page 1 2014-05-19 IPD068N10N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA Gate-source leakage current Drain-source on-state resistance V DS=100 V, V GS=0 V, T j=125 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=90 A - 10 100 1 100 nA 5.7 6.8 mW Gate resistance Transconductance V GS=6 V, I D=45 A - 7.1 12.3 R G - 1.6 g fs |V DS|>2|I D|R DS(on)max, I D=90 A 54 107 -W -S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2014-05-19 IPD068N10N3 G Parameter Symbol Conditions min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=80 A, R G,ext=3.6 W - 3690 646 25 19 37 37 9 4910 pF - ns - Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - 18 - nC Q gd Q sw V DD=50 V, I D=90 A, V GS=0 to 10 V Qg - 10 17 51 68 V plateau - 4.9 - V Q oss V DD=50 V, V GS=0 V - 68 91 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=90 A, T j=25 °C t r.


IPI90R1K2C3 IPD068N10N3G BSC028N06NS


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