Document
IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD068N10N3 G
100 V 6.8 mW 90 A
Package Marking
PG-TO252-3 068N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
90 72 360 130 ±20 150 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.2
page 1
2014-05-19
IPD068N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=90 µA 2 2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.1
1 µA
Gate-source leakage current Drain-source on-state resistance
V DS=100 V, V GS=0 V, T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=90 A
-
10 100 1 100 nA 5.7 6.8 mW
Gate resistance Transconductance
V GS=6 V, I D=45 A
- 7.1 12.3
R G - 1.6
g fs
|V DS|>2|I D|R DS(on)max, I D=90 A
54
107
-W -S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-19
IPD068N10N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=50 V, f =1 MHz
V DD=50 V, V GS=10 V, I D=80 A, R G,ext=3.6 W
-
3690 646 25 19 37 37
9
4910 pF - ns -
Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs - 18 - nC
Q gd
Q sw
V DD=50 V, I D=90 A, V GS=0 to 10 V
Qg
-
10 17 51 68
V plateau
- 4.9 - V
Q oss
V DD=50 V, V GS=0 V
-
68 91 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=90 A, T j=25 °C
t r.