Power-Transistor. IPP126N10N3G Datasheet

IPP126N10N3G Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPP126N10N3G
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max TO-263
ID
100 V
12.3 m
58 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3
126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58
42
232
70
±20
94
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2010-06-23


IPP126N10N3G Datasheet
Recommendation IPP126N10N3G Datasheet
Part IPP126N10N3G
Description Power-Transistor
Feature IPP126N10N3G; IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal .
Manufacture Infineon Technologies
Datasheet
Download IPP126N10N3G Datasheet




Infineon Technologies IPP126N10N3G
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 1.6 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=46 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=46 A,
TO 220, TO 262
100
2
-
-
-
-
V GS=6 V, I D=23 A,
TO 220, TO 262
-
V GS=10 V, I D=46 A,
TO 263
-
V GS=6 V, I D=23 A,
TO263
-
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=46 A
29
-
2.7
0.1
10
1
11.0
13.6
10.7
13.3
1.1
57
-V
3.5
1 µA
100
100 nA
12.6 m
23.5
12.3
23.2
-
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2010-06-23



Infineon Technologies IPP126N10N3G
Parameter
Symbol Conditions
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=46 A, R G=1.6
-
-
-
-
-
-
-
1880
330
14
14
8
24
5
2500 pF
439
-
- ns
-
-
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 9 - nC
Q gd - 5 -
Q sw
V DD=50 V, I D=46 A,
V GS=0 to 10 V
-
9
-
Q g - 26 35
V plateau
- 4.9 - V
Q oss
V DD=50 V, V GS=0 V
-
35 46 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=46 A,
T j=25 °C
V R=15 V, I F=46 A ,
di F/dt =100 A/µs
- - 58 A
- - 232
- 0.9 1.2 V
- 61 - ns
- 103 - nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2010-06-23





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