IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature
Product Summary V DS R DS(on),max TO-263 ID
100 V 12.3 mΩ 58 A
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) fo...
