2SD1316

2SD1316 http:の//wwwし.はsてeホmiー、coムn.ペpaーnとジasをo、niごc.しcoて.くj4.4±いp02..だ501.ま5–+さ00.140.0す±0い.3、。。を s q q q q q s (TC=25˚C) TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC PC Tj Tstg 30±5 30±5 5 4 2 35 1.3 150 –55 ~ +150 V V V A A W ˚C ˚C s (TC=25˚C) 10.5min. 2.0 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 1.5max. 0.8±0.1 2.54±0.3 5.08±0.5 123 8.5±0.2 6.0±0.3 1.1max. 0.5max. 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 14.7±0.5 3.0–+00..24 4.4±0.5 0.8±0.1 2.54±0.3 5.08±0.5 R0.5 R0.5 1.1 max. 0 to 0.4 123 1:Base 2:Collector 3:Emitter N Type Package (DS) *1hFE2 hFE2 ICBO IEBO VCEO hFE1 hFE2*1 VCE(sat) VBE(sat) fT ton tstg tf Es/b*2 VCB = 25V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz 25 1000 2000 IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 20V IC = 1.45A, L = 100mH, RBE = 100Ω 100 QP 2000 ~ 5000 4000 ~ 10000 *2Es/b 60Hz 120Ω RBE 6V X L YB 1Ω G 100 µA 2 mA 35 V 10000 2.5 V 2.5 V 20 MHz 0.4 µs 3 µs 1 µs mJ C E 1 PC (W) IC (A) VCE(sat) (V) VBE(sat) (V) PC — Ta 40 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink 30 (1) (PC=1.3W) 20 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 Ta (˚C) IC — VCE 6 TC=25˚C 5 IB=2.0mA 4 1.8mA 1.6mA 1.4mA 1.2mA 3 1.0mA 0.8mA 0.6mA 0.4mA 2 0.2mA 1 0 0123456 VCE (V) 2SD1316 VCE(sat) — IC 100 IC/IB=250 30 10 TC=100˚C 3 25˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 13...