Power-Transistor. IPB023N04NG Datasheet

IPB023N04NG Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPB023N04NG
Ie]R
"%&$!"#3 Power-Transistor
Features
Q& ( ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I
Q* E2 =:7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA=:42 D:@? C
Q' 492 ? ? 6=
Q' @B> 2 ==6F6=
Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[#
Q   F2 =2 ? 496 D6CD65
Q) 3 7B66 A=2 D:? 8 + @" , 4@> A=:2 ? D
Q" 2 =@86? 7B66 2 44@B5:? 8 D@ #       
Product Summary
V 9H
R  ,@? >2 H
I9
Type
#)    '  ' !
#) )   '  ' !
IPP023N04N G
IPB023N04N G
,( K
*&+ Z"
1( 6
Package
Marking
E=%ID*.+%+
(*+C(,C
E=%ID**(%+
(*+C(,C
Maximum ratings, 2 DT W   T  E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
 @? D:? E@EC5B2 :? 4EBB6? D
) E=C65 5B2 :? 4EBB6? D*#
 F2 =2 ? 496 4EBB6? D C:? 8=6 AE=C6+#
 F2 =2 ? 496 6? 6B8I C:? 8=6 AE=C6
!2 D6 C@EB46 F@=D2 86
)# $ , -  2 ? 5 $  ,   
I 9 V =H /  T 8   T
V =H /  T 8 T
I 9$]aY_R
I 6H
E 6H
V =H
T 8   T
T 8   T
I 9    R =H   "
Value
1(
1(
,((
1(
)-(
q*(
Unit
6
Z@
K
+ 6F 
A2 86
  


IPB023N04NG Datasheet
Recommendation IPB023N04NG Datasheet
Part IPB023N04NG
Description Power-Transistor
Feature IPB023N04NG; Ie]R "%&$!"#™3 Power-Transistor Features Q& ( ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, E.
Manufacture Infineon Technologies
Datasheet
Download IPB023N04NG Datasheet




Infineon Technologies IPB023N04NG
Maximum ratings, 2 DT W   T  E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
) @G6B5:CC:A2 D:@?
P `\` T 8   T
( A6B2 D:? 8 2 ? 5 CD@B2 86 D6> A6B2 DEB6 T W T _`T
#  4=:> 2 D:4 42 D68@BI  #' #   
IPP023N04N G
IPB023N04N G
Value
)./
   
     
Unit
L
T
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
-96B> 2 =B6C:CD2 ? 46 ;E? 4D:@? 42 C6
, &  F6BC:@?  56F:46 @? )  
R `U@8
R `U@6
> :? :> 2 =7@@DAB:? D
 4> V 4@@=:? 8 2 B62 ,#
%
%
% (&1 A'L

% ,(
Electrical characteristics, 2 DT W   T  E? =6CC@D96BG:C6 CA64:7:65
Static characteristics
 B2 :? C@EB46 3 B62 <5@G? F@=D2 86
!2 D6 D9B6C9@=5 F@=D2 86
16B@ 82 D6 F@=D2 86 5B2 :? 4EBB6? D
V "7G#9HH V =H /  I 9 > 
V =H"`U# V 9H4V =H I 9   W 
I 9HH
V 9H  /  V =H / 
T W   T
,(
*
%
%
%
(&)
%K
,
) s6
V 9H  /  V =H / 
T W   T
%
)( )((
!2 D6 C@EB46 =62 <2 86 4EBB6? D
I =HH
V =H  /  V 9H /
%
)( )(( [6
 B2 :? C@EB46 @? CD2 D6 B6C:CD2 ? 46-# R 9H"\[# V =H /  I 9  
% )&1 *&+ Z"
!2 D6 B6C:CD2 ? 46
R=
% )&1 % "
I^N[_P\[QaP`N[PR
g S_
gV 9Hg5*gI 9gR 9H"\[#ZNd
I 9  
/-
)-(
%H
*# , 66 7:8EB6  7@B> @B6 56D2 :=65 :? 7@B> 2 D:@?
+# , 66 7:8EB6  7@B> @B6 56D2 :=65 :? 7@B> 2 D:@?
,#  6F:46 @?  > > H  > > H  > > 6A@HI )  
4@? ? 64D:@? )   :CF6BD:42 =:? CD:==2 :B
-# & 62 CEB65 7B@> 5B2 :? D2 3 D@ C@EB46 A:?
+  G:D9  4>  @? 6 =2 I6B  W > D9:4< 4@AA6B2 B62 7@B5B2 :?
+ 6F 
A2 86 
  



Infineon Technologies IPB023N04NG
Parameter
Symbol Conditions
IPP023N04N G
IPB023N04N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
#? AED42 A2 4:D2 ? 46
( EDAED42 A2 4:D2 ? 46
+ 6F6BC6 DB2 ? C76B42 A2 4:D2 ? 46
-EB? @? 56=2 I D:> 6
+ :C6 D:> 6
-EB? @7756=2 I D:> 6
2 ==D:> 6
C V__
C \__
8^__
t Q"\[#
t^
t Q"\SS#
tS
V =H /  V 9H  / 
f & " J
V 99  /  V =H / 
I 9    R =  "
!2 D6  92 BT6  92 B2 4D6B:CD:4C.#
!2 D6 D@ C@EB46 492 B86
!2 D6 492 B86 2 DD9B6C9@=5
!2 D6 D@ 5B2 :? 492 B86
, G:D49:? 8 492 B86
!2 D6 492 B86 D@D2 =
!2 D6 A=2 D62 E F@=D2 86
!2 D6 492 B86 D@D2 = CI? 4  -
( EDAED492 B86
Q T_
Q T"`U#
Q TQ V 99  /  I 9   
Q _c
V =H D@ /
QT
V ]YN`RNa
Q T"_e[P#
V 9H / 
V =H D@ /
Q \__
V 99  /  V =H /
Reverse Diode
 :@56 4@? D:? E@EC7@BG2 B5 4EBB6? D
 :@56 AE=C6 4EBB6? D
 :@56 7@BG2 B5 F@=D2 86
+ 6F6BC6 B64@F6BI 492 B86
IH
I H$]aY_R
T 8   T
V H9
V =H /  I <   
T W   T
Q ^^
V G  /  I <4I H
Qi <'Qt    W C
.# , 66 7:8EB6  7@B82 D6 492 B86 A2 B2 > 6D6B567:? :D:@?
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
/+((
*(((
//
*/
.&.
,(
/&0
)(((( ]<
*/((
%
% [_
%
%
%
+- % [8
** %
)) %
*, %
1( )*(
,&0 % K
0- % [8
/+ %
% 1( 6
% ,((
(&1+ )&* K
0( % [8
+ 6F 
A2 86 
  







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