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IPB026N06N Dataheets PDF



Part Number IPB026N06N
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB026N06N DatasheetIPB026N06N Datasheet (PDF)

Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB026N06N 60 V 2.6 mW 100 A 65 nC 56 nC PG-TO263-3 Type IPB026N06N Package PG-TO263-3 Marking 026N06N Maximum ratings, at T j=25 °C, unless.

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Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB026N06N 60 V 2.6 mW 100 A 65 nC 56 nC PG-TO263-3 Type IPB026N06N Package PG-TO263-3 Marking 026N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 100 A 100 V GS=10 V, T C=25 °C, R thJA =50K/W 25 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 110 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2012-12-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPB026N06N Value 136 3.0 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA bottom minimal footprint 6 cm² cooling area4) - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=75 µA I DSS V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=100 A V GS=6 V, I D=25 A RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 60 2.1 - 80 - 1.1 K/W - 62 - 40 - -V 2.8 3.3 0.5 1 µA 10 100 10 100 nA 2.3 2.6 mW 3.0 3.9 1.3 1.95 W 160 - S Rev.2.2 page 2 2012-12-20 Parameter Symbol Conditions IPB026N06N min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=100 A, R G,ext,ext=3 W Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Q gs Q g(th) Q gd Q sw V DD=30 V, I D=100 A, V GS=0 to 10 V Qg V plateau Q g(sync) V DS=0.1 V, V GS=0 to 10 V Q oss V DD=30 V, V GS=0 V Reverse Diode Diode continuous forward current Diode pulse current IS I S,pulse T C=25 °C Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C Reverse recovery time Reverse recovery charge t rr V R=30 V, I F=100 A, Q rr di F/dt =100 A/µs 5) See figure 16 for gate charge parameter definition - - - - - - - 4100 980 39 17 15 30 8 5125 pF 1225 78 - ns - 20 - nC 11 11 15 19 56 66 4.8 - V 49 - nC 65 - - 100 A - 400 1.0 1.2 V 55 88 ns 73 - nC Rev.2.2 page 3 2012-12-20 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V IPB026N06N 160 120 140 100 120 80 100 Ptot [W] ID [A] 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 200 TC [°C] 0 0 25 50 75 100 125 150 175 200 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 1000 limited by on-state resistance 10 1 µs ID [A] ZthJC [K/W] 100 10 1 10 µs 100 µs 1 ms DC 10 ms 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.1 0.1 Rev.2.2 1 10 VDS [V] 0.01 100 0.00001 0.0001 0.001 tp [s] page 4 0.01 0.1 2012-12-20 ID [A] gfs [S] ID [A] RDS(on) [mW] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 400 10 V 7 V 360 320 6V 280 240 200 5.5 V 160 120 5V 80 40 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 400 360 320 280 240 200 160 120 80 40 0 0 175 °C 25 °C 246 VGS [V] IPB026N06N 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 8 7 5 V 5.5 V 6 V 6 5 4 3 7V 10 V 2 1 0 3.0 0 80 160 240 320 400 ID [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 150 100 50 0 8 0 20 40 60 80 100 ID [A] Rev.2.2 page 5 2012-12-20 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS IPB026N06N 55 4.5 44 RDS(on) [mW] VGS(th) [V] 3.5 max 3 2.5 typ 2 3 750 µA 75 µA 2 1.5 1.


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