Document
Type
OptiMOSTM Power-Transistor
Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
IPB026N06N
60 V 2.6 mW 100 A 65 nC 56 nC
PG-TO263-3
Type IPB026N06N
Package PG-TO263-3
Marking 026N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R thJA =50K/W
25
Pulsed drain current2)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
110 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22 2) See figure 3 for more detailed information
3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W
Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1
IPB026N06N
Value 136
3.0
-55 ... 175 55/175/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case Device on PCB
R thJC R thJA
bottom minimal footprint 6 cm² cooling area4)
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=75 µA
I DSS
V DS=60 V, V GS=0 V, T j=25 °C
V DS=60 V, V GS=0 V, T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=25 A
RG
g fs
|V DS|>2|I D|R DS(on)max, I D=100 A
60 2.1
-
80
- 1.1 K/W - 62 - 40
- -V 2.8 3.3 0.5 1 µA
10 100 10 100 nA 2.3 2.6 mW 3.0 3.9 1.3 1.95 W 160 - S
Rev.2.2
page 2
2012-12-20
Parameter
Symbol Conditions
IPB026N06N
min.
Values typ.
Unit max.
Dynamic characteristics
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0 V, V DS=30 V, f =1 MHz
V DD=30 V, V GS=10 V, I D=100 A, R G,ext,ext=3 W
Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd Q sw
V DD=30 V, I D=100 A, V GS=0 to 10 V
Qg
V plateau
Q g(sync)
V DS=0.1 V, V GS=0 to 10 V
Q oss
V DD=30 V, V GS=0 V
Reverse Diode
Diode continuous forward current Diode pulse current
IS I S,pulse
T C=25 °C
Diode forward voltage
V SD
V GS=0 V, I F=100 A, T j=25 °C
Reverse recovery time Reverse recovery charge
t rr V R=30 V, I F=100 A, Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
-
-
4100 980 39 17 15 30
8
5125 pF 1225
78 - ns -
20 - nC 11 11 15 19 56 66 4.8 - V
49 - nC
65 -
- 100 A - 400
1.0 1.2 V
55 88 ns 73 - nC
Rev.2.2
page 3
2012-12-20
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS≥10 V
IPB026N06N
160 120
140 100
120
80 100
Ptot [W] ID [A]
80 60
60 40
40
20 20
0 0 25 50 75 100 125 150 175 200
TC [°C]
0 0 25 50 75 100 125 150 175 200
TC [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
1000
limited by on-state resistance
10
1 µs
ID [A] ZthJC [K/W]
100 10 1
10 µs 100 µs
1 ms DC
10 ms
1
0.5
0.2 0.1
0.1 0.05
0.02 0.01 single pulse
0.1 0.1
Rev.2.2
1 10 VDS [V]
0.01
100
0.00001 0.0001
0.001
tp [s]
page 4
0.01 0.1
2012-12-20
ID [A] gfs [S]
ID [A] RDS(on) [mW]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
400
10 V 7 V
360
320
6V
280
240 200 5.5 V
160
120
5V
80
40
0 0.0 0.5 1.0 1.5 2.0 2.5
VDS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
400
360
320
280
240
200
160
120
80
40
0 0
175 °C
25 °C
246 VGS [V]
IPB026N06N
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
8 7 5 V 5.5 V 6 V 6 5 4 3 7V
10 V
2 1 0 3.0 0 80 160 240 320 400
ID [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
150
100
50
0 8 0 20 40 60 80 100
ID [A]
Rev.2.2
page 5
2012-12-20
9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS
IPB026N06N
55
4.5
44
RDS(on) [mW] VGS(th) [V]
3.5
max
3
2.5 typ
2
3
750 µA
75 µA
2
1.5
1.