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IPP80N06S3L-06 Dataheets PDF



Part Number IPP80N06S3L-06
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP80N06S3L-06 DatasheetIPP80N06S3L-06 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L06 3N06L06 .

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L06 3N06L06 3N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=40 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 455 80 ±16 136 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2007-11-07 IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 1.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area4) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 µA Gate-source leakage current Drain-source on-state resistance V DS=55 V, V GS=0 V, T j=125 °C2) I GSS V GS=16 V, V DS=0 V R DS(on) V GS=5 V, I D=38 A - - 1 100 1 100 nA 8.3 10.4 mΩ V GS=5 V, I D=38 A, SMD version - 8.0 10.1 V GS=10 V, I D=56 A - 4.9 5.9 V GS=10 V, I D=56 A, SMD version - 4.6 5.6 Rev. 1.1 page 2 2007-11-07 Parameter Symbol IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Conditions min. Values typ. Unit max. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - 9417 - pF C oss V GS=0 V, V DS=25 V, f =1 MHz - 1181 - Crss - 1127 - t d(on) - 20 - ns tr V DD=27.5 V, V GS=10 V, I D=80 A, - 43 - t d(off) R G=3.5 Ω - 55 - t f - 39 - Gate Charge Characteristics2) Gate to source charge Q gs - 44 - nC Gate to drain charge Gate charge total Q gd V DD=11 V, I D=80 A, - 24 - Q g V GS=0 to 10 V - 131 196 Gate plateau voltage V plateau - 4.4 - V Reverse Diode Diode continous forward current2) Diode pulse current2) IS I S,pulse T C=25 °C - - 80 A - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time2) Reverse recovery charge2) t rr V R=27.5 V, I F=I S, Q rr di F/dt =100 A/µs - 55 - 70 - 1) Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 114 A at 25°C. For detailed information see Application Note ANPS071E 2) Defined by design. Not subject to production test. ns nC 3) Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 1 Power dissipation P tot = f(T C); V GS ≥ 4 V IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 2 Drain current I D = f(T C); V GS ≥ 4 V P tot [W] I D [A] 160 140 120 100 80 60 40 20 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 100 80 60 40 20 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 0.01 10-2 200 1 0.1 Rev. 1.1 1 10 V DS [V] 100 single pulse 10-3 10-6 10-5 10-4 10-3 10-2 t p [s] 10-1 100 page 4 2007-11-07 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 160 10 V 140 120 100 80 60 40 20 0 01234 V DS [V] IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 14 5V 4.5 V 4V 3.5 V 3V 56 12 10 8 6 4 2 0 0 5V 6V 8V 10 V 50 100 I D [A] 150 7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j 160 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 10 140 120 -55 °C 25 °C 175 °C 8 100 I D [A] R DS(on) [mΩ] 80 6 60 40 4 20 0 0123456 V GS [V] 2 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.1 page 5 2007-11-07 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3 IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 V GS(th) [V] .


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