Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
Product Summary V DS R DS(on),max (SMD version) ID
55 V 5.6 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N06L06 3N06L06 3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T C=25 °C I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 80
80
320 455 80 ±16 136 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.1
page 1
2007-11-07
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 1.1 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area4)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V, T j=25 °C
-
0.01
1 µA
Gate-source leakage current Drain-source on-state resistance
V DS=55 V, V GS=0 V, T j=125 °C2)
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=5 V, I D=38 A
-
-
1 100
1 100 nA 8.3 10.4 mΩ
V GS=5 V, I D=38 A, SMD version
- 8.0 10.1
V GS=10 V, I D=56 A
- 4.9 5.9
V GS=10 V, I D=56 A, SMD version
-
4.6 5.6
Rev. 1.1
page 2
2007-11-07
Parameter
Symbol
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
Conditions
min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss - 9417 - pF
C oss
V GS=0 V, V DS=25 V, f =1 MHz
-
1181
-
Crss - 1127 -
t d(on)
- 20 - ns
tr
V DD=27.5 V, V GS=10 V, I D=80 A,
-
43
-
t d(off)
R G=3.5 Ω
- 55 -
t f - 39 -
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 44 - nC
Gate to drain charge Gate charge total
Q gd V DD=11 V, I D=80 A,
-
24
-
Q g V GS=0 to 10 V
- 131 196
Gate plateau voltage
V plateau
- 4.4 - V
Reverse Diode Diode continous forward current2) Diode pulse current2)
IS I S,pulse
T C=25 °C
- - 80 A - - 320
Diode forward voltage
V SD
V GS=0 V, I F=80 A, T j=25 °C
0.6 0.9 1.3 V
Reverse recovery time2) Reverse recovery charge2)
t rr V R=27.5 V, I F=I S, Q rr di F/dt =100 A/µs
- 55 - 70 -
1) Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 114 A at 25°C. For detailed information see Application Note ANPS071E
2) Defined by design. Not subject to production test.
ns nC
3) Qualified at -5V and +16V.
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07
1 Power dissipation P tot = f(T C); V GS ≥ 4 V
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
2 Drain current I D = f(T C); V GS ≥ 4 V
P tot [W] I D [A]
160
140
120
100
80
60
40
20
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
100
80
60
40
20
0 200 0 50 100 150
T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
100 0.5
10-1
0.1 0.05
0.01
10-2
200
1 0.1
Rev. 1.1
1 10 V DS [V]
100
single pulse
10-3 10-6
10-5
10-4
10-3
10-2
t p [s]
10-1
100
page 4
2007-11-07
I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
160
10 V
140
120
100
80
60
40
20
0 01234 V DS [V]
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
14
5V
4.5 V
4V 3.5 V 3V
56
12 10
8 6 4 2 0
0
5V
6V 8V 10 V
50 100 I D [A]
150
7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j
160
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V
10
140 120
-55 °C
25 °C 175 °C
8
100
I D [A] R DS(on) [mΩ]
80 6
60
40 4
20
0 0123456 V GS [V]
2 -60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2007-11-07
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
3
IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
105
V GS(th) [V] .