IRF7811

PD - 93812 PD - 93813 IIRRFF77880099//IIRRFF77881111 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET® Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance Low Conduction Losses S1 AA 8D Low Switching Losses S2 7D Minimizes Parallel MOSFETs for high current applications S3 6D G4 5D Description These new devices employ advanced HEXFET® Power SO-8 Top View MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of mobile microprocessors. DEVICE RATINGS The IRF7809/IRF7811 employs a newCopperStrapTM interconnect technology pioneered by International VDS IRF7809 30V IRF7811 28V Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.5W @ 25°C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and RDS(on) QG Qsw Q oss 7.5 mΩ 77.5 nC 23.9 nC 30 nC 11 mΩ 23 nC 7 nC 31 nC reliability and reducing board space. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current T = 25°C A TL = 90°C Power Dissipati...