N-Channel IGBT. 30J324 Datasheet

30J324 IGBT. Datasheet pdf. Equivalent


Toshiba Semiconductor 30J324
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications
Fast Switching Applications
Unit: mm
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 μs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
Low saturation voltage: VCE (sat) = 2.0 V (typ.)
FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
30
60
30
60
170
150
55 to 150
Unit
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.735
1.90
Unit
°C/W
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT30J324
1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-01


30J324 Datasheet
Recommendation 30J324 Datasheet
Part 30J324
Description Transistor Silicon N-Channel IGBT
Feature 30J324; GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switc.
Manufacture Toshiba Semiconductor
Datasheet
Download 30J324 Datasheet




Toshiba Semiconductor 30J324
Electrical Characteristics (Ta = 25°C)
GT30J324
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching
loss
Turn-off switching
loss
Peak forward voltage
Reverse recovery time
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
Eon
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 3 mA, VCE = 5 V
IC = 30 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 30 A
VGG = +15 V, RG = 24
(Note 1)
(Note 2)
3.5
Eoff
VF IF = 30 A, VGE = 0
trr IF = 30 A, di/dt = 100 A/μs
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max
2.0
4650
0.09
±500
1.0
6.5
2.45
0.07
0.24
0.30
0.05
0.43
1.00
0.80
3.8
60
Unit
nA
mA
V
V
pF
μs
mJ
V
ns
VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
td (off)
tf
toff
10%
10%
90%
10%
td (on)
tr
ton
10%
Note 2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
Eoff
5%
Eon
2 2006-11-01



Toshiba Semiconductor 30J324
60
Common emitter
50 Tc = 25°C
IC – VCE
20 15
10
40 9
30
20
VGE = 8 V
10
0
012345
Collector-emitter voltage VCE (V)
GT30J324
VCE – VGE
20
Common emitter
Tc = 40°C
16
12
8
60
30
4
IC = 10 A
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
VCE – VGE
20
Common emitter
Tc = 25°C
16
12
8
30
60
4
IC = 10 A
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
VCE – VGE
20
Common emitter
Tc = 125°C
16
12
8
30
60
4
IC = 10 A
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
60
Common emitter
50 VCE = 5 V
IC – VGE
40
30
20
10
Tc = 125°C
0
04
25
40
8
12
16
Gate-emitter voltage VGE (V)
20
4
Common emitter
VGE = 15 V
3
VCE (sat) – Tc
60
2 30
IC = 10 A
1
0
60 20
20
60 100 140
Case temperature Tc (°C)
3 2006-11-01







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)