MJE15030

MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio amplifier applications. Features: Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. TO-220AB compact package. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN MJE15030 PNP MJE15031 8.0 Ampere Complementary Silicon Power Transistors 150 Volts 50 Watts TO-220 Page 1 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG Rating 150 5.0 8.0 16 2.0 50 0.4 -65 to +150 Thermal Characteristic Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 2.50 Unit V A W W/°C °C Unit °C/W Figure - 1 Power Derating Page 2 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Minimum Off Characteristics Collector-Emitte...