Power Transistors. MJE15030 Datasheet

MJE15030 Transistors. Datasheet pdf. Equivalent

MJE15030 Datasheet
Recommendation MJE15030 Datasheet
Part MJE15030
Description Complementary Power Transistors
Feature MJE15030; MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio .
Manufacture Multicomp
Datasheet
Download MJE15030 Datasheet




Multicomp MJE15030
MJE15030, 15031
Complementary Power Transistors
Designed for use in high-frequency drivers in audio amplifier applications.
Features:
Collector-Emitter sustaining voltage-
VCEO(sus) = 150V (Minimum) - MJE15030, MJE15031.
DC current gain specified to 8.0 Amperes
hFE = 20 (Minimum) at IC = 4.0A.
TO-220AB compact package.
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN
MJE15030
PNP
MJE15031
8.0 Ampere
Complementary Silicon
Power Transistors
150 Volts
50 Watts
TO-220
Page 1
31/05/05 V1.0



Multicomp MJE15030
MJE15030,15031
Complementary Power Transistors
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
150
5.0
8.0
16
2.0
50
0.4
-65 to +150
Thermal Characteristic
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
2.50
Unit
V
A
W
W/°C
°C
Unit
°C/W
Figure - 1 Power Derating
Page 2
31/05/05 V1.0



Multicomp MJE15030
MJE15030,15031
Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 10mA, IB = 0)
VCEO(sus)
150
Maximum
-
Collector Cut off Current
(VCE = 150V, IB = 0)
ICEO
-
0.1
Collector Cut off Current
(VCB = 150V, IE = 0)
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
On Characteristics (1)
DC Current Gain
(IC = 0.1A, VCE = 2.0V)
(IC = 2.0A, VCE = 2.0V)
(IC = 3.0A, VCE = 2.0V)
(IC = 4.0A, VCE = 2.0V)
Collector-Emitter Saturation Voltage
(IC = 1.0A, IB = 0.1A)
Base-Emitter On Voltage
(IC = 1.0A, VCE = 2.0V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 0.5A, VCE = 10V, f = 1.0MHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
(2) fT = hFE ftest.
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
-
-
40
40
40
20
-
-
30
10
-
0.5
1.0
-
Unit
V
mA
µA
-
V
MHz
Page 3
31/05/05 V1.0







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