Power Transistor. BUP41 Datasheet

BUP41 Transistor. Datasheet pdf. Equivalent


INCHANGE BUP41
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP41
DESCRIPTION
·High Collector Current-IC= 6A
·Low Collector Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A
·High Switching Speed
·Complement to Type BUP40
APPLICATIONS
·For audio amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
6A
10 W
150
-55~150
isc websitewww.iscsemi.cn
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BUP41 Datasheet
Recommendation BUP41 Datasheet
Part BUP41
Description Silicon NPN Power Transistor
Feature BUP41; INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP41 DESCRIPTIO.
Manufacture INCHANGE
Datasheet
Download BUP41 Datasheet




INCHANGE BUP41
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP41
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.1A
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V
MIN TYP. MAX UNIT
0.4 V
1.4 V
1.0 μA
1.0 μA
100 500
40
120 MHz
25 pF
isc websitewww.iscsemi.cn
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