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Power Transistor. BUP41 Datasheet |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP41
DESCRIPTION
·High Collector Current-IC= 6A
·Low Collector Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A
·High Switching Speed
·Complement to Type BUP40
APPLICATIONS
·For audio amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
6A
10 W
150 ℃
-55~150 ℃
isc website：www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP41
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.1A
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V
MIN TYP. MAX UNIT
0.4 V
1.4 V
1.0 μA
1.0 μA
100 500
40
120 MHz
25 pF
isc website：www.iscsemi.cn
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