IPB042N10N3G

IPB042N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.2 mΩ ID 137 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB042N10N3 G Package PG-TO 263-3 Marking 042N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.9,2017-07-17 OptiMOSª3Power-Transistor,100V IPB042N10N3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . ...