Power-Transistor. IPI045N10N3G Datasheet

IPI045N10N3G Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPI045N10N3G
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
OptiMOS3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO 263)
ID
100 V
4.2 mW
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Package
Marking
PG-TO263-3
042N10N
PG-TO262-3
045N10N
PG-TO220-3
045N10N
Maximum ratings, at T A=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
100
100
400
340
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.8
page 1
2016-08-17


IPI045N10N3G Datasheet
Recommendation IPI045N10N3G Datasheet
Part IPI045N10N3G
Description Power-Transistor
Feature IPI045N10N3G; IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal l.
Manufacture Infineon Technologies
Datasheet
Download IPI045N10N3G Datasheet




Infineon Technologies IPI045N10N3G
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 0.7 K/W
- 62
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=150 µA
2
2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=100 A,
TO 220, TO 262
-
-
-
10 100
1 100 nA
3.9 4.5 mW
V GS=10 V, I D=50 A, - 3.6 4.2
TO263
V GS=6 V, I D=50 A, TO
220, TO 262
-
4.7 7.7
Gate resistance
Transconductance
V GS=6 V, I D=50 A,
TO263
- 4.4 7.4
R G - 1.4 - W
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
73
145
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.8
page 2
2016-08-17



Infineon Technologies IPI045N10N3G
Parameter
Symbol Conditions
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=50 A, R G,ext=1.6 W
-
-
-
-
-
-
-
6320
1210
41
27
59
48
14
8410 pF
1610
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
V DD=50 V, I D=100 A,
V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=50 V, V GS=0 V
-
-
-
-
-
-
30 39 nC
16 -
27 -
88 117
4.7 - V
122 162 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 100 A
- - 400
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
1.0 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=50 V, I F=I S,
Q rr di F/dt =100 A/µs
- 68 - ns
- 135 - nC
4) See figure 16 for gate charge parameter definition
Rev. 2.8
page 3
2016-08-17





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