Power-Transistor. IPP060N06N Datasheet

IPP060N06N Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPP060N06N
Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP060N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
6.0 mW
45 A
32 nC
27 nC
PG-TO220-3
Type
IPP060N06N
Package
PG-TO220-3
Marking
060N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
45 A
45
V GS=10 V, T C=25 °C,
R thJA =50K/W
17
Pulsed drain current2)
I D,pulse T C=25 °C
180
Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W
60 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20


IPP060N06N Datasheet
Recommendation IPP060N06N Datasheet
Part IPP060N06N
Description Power-Transistor
Feature IPP060N06N; Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 10.
Manufacture Infineon Technologies
Datasheet
Download IPP060N06N Datasheet




Infineon Technologies IPP060N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP060N06N
Value
83
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
bottom
minimal footprint
6 cm² cooling area4)
-
-
-
- 1.8 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=36 µA 2.1 2.8 3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=45 A
V GS=6 V, I D=12 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=45 A
-
-
-
-
-
36
10 100
10 100 nA
5.2 6 mW
6.7 9
1.5 2.3 W
73 - S
Rev.2.2
page 2
2012-12-20



Infineon Technologies IPP060N06N
Parameter
Symbol Conditions
IPP060N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=45 A,
R G,ext,ext=3 W
Q gs
Q g(th)
Q gd
Q sw
V DD=30 V, I D=45 A,
V GS=0 to 10 V
Qg
V plateau
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=30 V, V GS=0 V
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=45 A,
T j=25 °C
t rr V R=30 V, I F=45A ,
Q rr di F/dt =100 A/µs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2000
490
22
12
12
20
7
2500 pF
613
44
- ns
-
-
-
9 - nC
5-
57
9-
27 32
4.8 - V
24 - nC
32 -
- 45 A
- 180
1.0 1.2 V
32 51 ns
28 - nC
5) See figure 16 for gate charge parameter definition
Rev.2.2
page 3
2012-12-20







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