Power-Transistor. IPB035N08N3G Datasheet

IPB035N08N3G Power-Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPB035N08N3G
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Product Summary
V DS
R DS(on),max
ID
80 V
3.5 m
100 A
Type
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Package
Marking
PG-TO220-3
037N08N
PG-TO262-3
037N08N
PG-TO263-3
035N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse3)
ID
I D,pulse
E AS
T C=25 °C2)
T C=100 °C
T C=25 °C
I D=100 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Value
100
100
400
510
±20
214
-55 ... 175
55/175/56
Rev. 2.4
page 1
Unit
A
mJ
V
W
°C
2010-06-23


IPB035N08N3G Datasheet
Recommendation IPB035N08N3G Datasheet
Part IPB035N08N3G
Description Power-Transistor
Feature IPB035N08N3G; OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized .
Manufacture Infineon Technologies
Datasheet
Download IPB035N08N3G Datasheet




Infineon Technologies IPB035N08N3G
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area4)
-
-
0.7 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
(SMD)
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
80
V GS(th) V DS=V GS, I D=155 µA
2
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
V DS=80 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=6 V, I D=50 A
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=6 V, I D=50 A
-
RG
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
75
-
-V
2.8
3.5
0.1
1 µA
10
100
1
100 nA
3.1
3.75 m
3.9
6.3
2.8
3.5
3.6
6.0
1.9
-
149
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
page 2
2010-06-23



Infineon Technologies IPB035N08N3G
Parameter
Symbol Conditions
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=40 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=40 V, V GS=10 V,
-
t d(off)
I D=100 A, R G=1.6
-
tf
-
6100
1640
59
23
79
45
14
8110 pF
2180
-
- ns
-
-
-
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=40 V, I D=100 A,
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=40 V, V GS=0 V
-
30
- nC
18
-
31
-
88
117
5.0
-V
119
158 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A,
T j=25 °C
t rr
V R=40 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
100 A
-
-
400
-
1.0
1.2 V
-
73
- ns
-
136
- nC
5) See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2010-06-23





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